FDC855N Tech Spezifikatioune
onsemi - FDC855N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDC855N
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SuperSOT™-6 | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 27mOhm @ 6.1A, 10V | |
Power Dissipation (Max) | 1.6W (Ta) | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 655 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.1A (Ta) | |
Basis Produktnummer | FDC855 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDC855N.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDC855N | FDC86244 | FDC796N | FDC855N |
Hiersteller | onsemi | onsemi | onsemi | Fairchild Semiconductor |
Rds On (Max) @ Id, Vgs | 27mOhm @ 6.1A, 10V | 144mOhm @ 2.3A, 10V | 9mOhm @ 12.5A, 10V | 27mOhm @ 6.1A, 10V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Basis Produktnummer | FDC855 | FDC8624 | FDC796 | - |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 1.6W (Ta) | 1.6W (Ta) | 2W (Ta) | 1.6W (Ta) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | 6 nC @ 10 V | 20 nC @ 5 V | 13 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 655 pF @ 15 V | 345 pF @ 75 V | 1444 pF @ 15 V | 655 pF @ 15 V |
Vgs (th) (Max) @ Id | 3V @ 250µA | 4V @ 250µA | 3V @ 250µA | 3V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 6V, 10V | 4.5V, 10V | 4.5V, 10V |
Supplier Device Package | SuperSOT™-6 | SuperSOT™-6 | SuperSOT™-6 FLMP | SuperSOT™-6 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 30 V | 150 V | 30 V | 30 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.1A (Ta) | 2.3A (Ta) | 12.5A (Ta) | 6.1A (Ta) |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | SOT-23-6 Thin, TSOT-23-6 |
Eroflueden FDC855N PDF DataDhusts an onsemi Dokumentatioun fir FDC855N - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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