FDC6321C Tech Spezifikatioune
onsemi - FDC6321C technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDC6321C
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SuperSOT™-6 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V | |
| Power - Max | 700mW | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 25V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 680mA, 460mA | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | FDC6321 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDC6321C.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | FDC6321C | FDC6320C | FDC6322C | FDC6320C |
| Hiersteller | onsemi | onsemi | onsemi | Fairchild Semiconductor |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Serie | - | - | - | - |
| Power - Max | 700mW | 700mW | 700mW | 700mW |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V | 4Ohm @ 400mA, 4.5V | 4Ohm @ 400mA, 4.5V | 4Ohm @ 400mA, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V | 9.5pF @ 10V | 9.5pF @ 10V | 9.5pF @ 10V |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| Basis Produktnummer | FDC6321 | FDC6320 | FDC6322 | FDC6320 |
| Supplier Device Package | SuperSOT™-6 | SuperSOT™-6 | SuperSOT™-6 | SuperSOT™-6 |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Konfiguratioun | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 680mA, 460mA | 220mA, 120mA | 220mA, 460mA | 220mA, 120mA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 5V | 0.4nC @ 4.5V | 0.7nC @ 4.5V | 0.4nC @ 4.5V |
| Entworf fir Source Voltage (Vdss) | 25V | 25V | 25V | 25V |
Eroflueden FDC6321C PDF DataDhusts an onsemi Dokumentatioun fir FDC6321C - onsemi.
FDC6320C-NLVBSEMIFDC6318P-NLFairchild (onsemi)FDC6323LonsemiIC PWR SWITCH P-CH 1:1 SUPERSOT6FDC6322C MOSFairchild (onsemi)FDC6323L MOSFairchild (onsemi)FDC6320ConsemiMOSFET N/P-CH 25V SSOT6FDC6322C-NLFairchild (onsemi)FDC631NFairchild (onsemi)FDC6320Fairchild (onsemi)FDC6322ConsemiMOSFET N/P-CH 25V SSOT-6FDC631N-NLFairchild (onsemi)FDC6320CFairchild SemiconductorSMALL SIGNAL FIELD-EFFECT TRANSIFDC6322CFairchild SemiconductorSMALL SIGNAL P-CHANNEL MOSFETFDC6321C-NLFairchild (onsemi)FDC6323L-NLFairchild (onsemi)
FDC6322LAPIS TechnologyFDC6318P MOSFairchild (onsemi)FDC6320C MOSFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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