FDB86102LZ Tech Spezifikatioune
onsemi - FDB86102LZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDB86102LZ
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK (TO-263) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 8.3A, 10V | |
Power Dissipation (Max) | 3.1W (Ta) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1275 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.3A (Ta), 30A (Tc) | |
Basis Produktnummer | FDB86102 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDB86102LZ.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDB86102LZ | FDB86363-F085 | FDB86102LZ | FDB86360-F085 |
Hiersteller | onsemi | onsemi | Fairchild Semiconductor | onsemi |
Input Capacitance (Ciss) (Max) @ Vds | 1275 pF @ 50 V | 10000 pF @ 40 V | 1275 pF @ 50 V | 14600 pF @ 25 V |
Serie | PowerTrench® | Automotive, AEC-Q101, PowerTrench® | PowerTrench® | Automotive, AEC-Q101, PowerTrench® |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 3V @ 250µA | 4V @ 250µA | 3V @ 250µA | 4.5V @ 250µA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 24mOhm @ 8.3A, 10V | 2.4mOhm @ 80A, 10V | 24mOhm @ 8.3A, 10V | 1.8mOhm @ 80A, 10V |
Entworf fir Source Voltage (Vdss) | 100 V | 80 V | 100 V | 80 V |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | 150 nC @ 10 V | 21 nC @ 10 V | 253 nC @ 10 V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
FET Feature | - | - | - | - |
Supplier Device Package | D²PAK (TO-263) | D²PAK (TO-263) | D2PAK (TO-263) | D²PAK (TO-263) |
Basis Produktnummer | FDB86102 | FDB86363 | - | FDB86360 |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 4.5V, 10V | 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 3.1W (Ta) | 300W (Tc) | 3.1W (Ta) | 333W (Tc) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.3A (Ta), 30A (Tc) | 110A (Tc) | 8.3A (Ta), 30A (Tc) | 110A (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Eroflueden FDB86102LZ PDF DataDhusts an onsemi Dokumentatioun fir FDB86102LZ - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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