FDB8442 Tech Spezifikatioune
onsemi - FDB8442 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDB8442
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D²PAK (TO-263) | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 80A, 10V | |
| Power Dissipation (Max) | 254W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 12200 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 28A (Ta), 80A (Tc) | |
| Basis Produktnummer | FDB844 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDB8442.
| Produktiounsattriff |  |
|
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|---|---|---|---|---|
| Part Number | FDB8442 | FDB8444 | FDB8444 | FDB8160 |
| Hiersteller | onsemi | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Basis Produktnummer | FDB844 | FDB844 | - | FDB816 |
| Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 10 V | 128 nC @ 10 V | 128 nC @ 10 V | 243 nC @ 10 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Bulk |
| Supplier Device Package | D²PAK (TO-263) | D²PAK (TO-263) | D2PAK (TO-263) | TO-263AB |
| Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 28A (Ta), 80A (Tc) | 70A (Tc) | 70A (Tc) | 80A (Tc) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power Dissipation (Max) | 254W (Tc) | 167W (Tc) | 167W (Tc) | 254W (Tc) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 12200 pF @ 25 V | 8035 pF @ 25 V | 8035 pF @ 25 V | 11825 pF @ 15 V |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 80A, 10V | 5.5mOhm @ 70A, 10V | 5.5mOhm @ 70A, 10V | 1.8mOhm @ 80A, 10V |
| Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 40 V | 30 V |
Eroflueden FDB8442 PDF DataDhusts an onsemi Dokumentatioun fir FDB8442 - onsemi.
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FDB8132_F085onsemiMOSFET N-CH 30V 80A D2PAKFDB8030LonsemiMOSFET N-CH 30V 80A TO263ABFDB8441onsemiMOSFET N-CH 40V 28A/120A TO263ABFDB8447LonsemiMOSFET N-CH 40V 15A/50A TO263ABFDB8444-F085onsemiMOSFET N-CH 40V 70A TO263ABFDB8443 MOSFairchild (onsemi)FDB8442Fairchild SemiconductorMOSFET N-CH 40V 28A/80A TO263ABFDB8445 MOSFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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