FDB6670AS Tech Spezifikatioune
onsemi - FDB6670AS technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDB6670AS
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 3V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK (TO-263) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 8.5mOhm @ 31A, 10V | |
Power Dissipation (Max) | 62.5W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 15 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 62A (Ta) | |
Basis Produktnummer | FDB667 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDB6670AS.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDB6670AS | FDB6690S | FDB6690S | FDB6670AL |
Hiersteller | onsemi | Fairchild Semiconductor | onsemi | onsemi |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 62A (Ta) | 42A (Ta) | 42A (Ta) | 80A (Ta) |
Power Dissipation (Max) | 62.5W (Tc) | 48W (Tc) | 48W (Tc) | 68W (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Basis Produktnummer | FDB667 | - | FDB669 | FDB667 |
FET Feature | - | - | - | - |
Supplier Device Package | D²PAK (TO-263) | D2PAK (TO-263) | D²PAK (TO-263) | D²PAK (TO-263) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Serie | PowerTrench® | PowerTrench®, SyncFET™ | PowerTrench®, SyncFET™ | PowerTrench® |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (th) (Max) @ Id | 3V @ 1mA | 3V @ 1mA | 3V @ 1mA | 3V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 175°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 15 V | 15 nC @ 5 V | 15 nC @ 5 V | 33 nC @ 5 V |
Rds On (Max) @ Id, Vgs | 8.5mOhm @ 31A, 10V | 15.5mOhm @ 21A, 10V | 15.5mOhm @ 21A, 10V | 6.5mOhm @ 40A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 15 V | 1238 pF @ 15 V | 1238 pF @ 15 V | 2440 pF @ 15 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden FDB6670AS PDF DataDhusts an onsemi Dokumentatioun fir FDB6670AS - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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