FDA59N30 Tech Spezifikatioune
onsemi - FDA59N30 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDA59N30
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-3PN | |
Serie | UniFET™ | |
Rds On (Max) @ Id, Vgs | 56mOhm @ 29.5A, 10V | |
Power Dissipation (Max) | 500W (Tc) | |
Package / Case | TO-3P-3, SC-65-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4670 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 300 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 59A (Tc) | |
Basis Produktnummer | FDA59 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDA59N30.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDA59N30 | FDA50N50 | FDA70N20 | FDA62N28 |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 300 V | 500 V | 200 V | 280 V |
Basis Produktnummer | FDA59 | - | FDA70 | FDA62 |
Rds On (Max) @ Id, Vgs | 56mOhm @ 29.5A, 10V | 105mOhm @ 24A, 10V | 35mOhm @ 35A, 10V | 51mOhm @ 31A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4670 pF @ 25 V | 6460 pF @ 25 V | 3970 pF @ 25 V | 4630 pF @ 25 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | 137 nC @ 10 V | 86 nC @ 10 V | 100 nC @ 10 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Supplier Device Package | TO-3PN | TO-3PN | TO-3PN | TO-3PN |
FET Feature | - | - | - | - |
Package protegéieren | Tube | Bulk | Tube | Tube |
Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
Serie | UniFET™ | UniFET™ | UniFET™ | UniFET™ |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 59A (Tc) | 48A (Tc) | 70A (Tc) | 62A (Tc) |
Power Dissipation (Max) | 500W (Tc) | 625W (Tc) | 417W (Tc) | 500W (Tc) |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
Eroflueden FDA59N30 PDF DataDhusts an onsemi Dokumentatioun fir FDA59N30 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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