FCP125N65S3R0 Tech Spezifikatioune
onsemi - FCP125N65S3R0 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FCP125N65S3R0
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4.5V @ 2.4mA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | SuperFET® III | |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 12A, 10V | |
| Power Dissipation (Max) | 181W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1940 pF @ 400 V | |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 650 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) | |
| Basis Produktnummer | FCP125 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FCP125N65S3R0.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | FCP125N65S3R0 | FCP130N60 | FCP11N60N | FCP130N60 |
| Hiersteller | onsemi | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
| Serie | SuperFET® III | SuperFET® II | SupreMOS™ | SuperFET® II |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1940 pF @ 400 V | 3590 pF @ 380 V | 1505 pF @ 100 V | 3590 pF @ 380 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) | 28A (Tc) | 10.8A (Tc) | 28A (Tc) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Vgs (th) (Max) @ Id | 4.5V @ 2.4mA | 3.5V @ 250µA | 4V @ 250µA | 3.5V @ 250µA |
| Vgs (Max) | ±30V | ±20V | ±30V | ±20V |
| Entworf fir Source Voltage (Vdss) | 650 V | 600 V | 600 V | 600 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package protegéieren | Tube | Tube | Bulk | Bulk |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 12A, 10V | 130mOhm @ 14A, 10V | 299mOhm @ 5.4A, 10V | 130mOhm @ 14A, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V | 70 nC @ 10 V | 35.6 nC @ 10 V | 70 nC @ 10 V |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| FET Feature | - | - | - | - |
| Basis Produktnummer | FCP125 | FCP130 | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Power Dissipation (Max) | 181W (Tc) | 278W (Tc) | 94W (Tc) | 278W (Tc) |
Eroflueden FCP125N65S3R0 PDF DataDhusts an onsemi Dokumentatioun fir FCP125N65S3R0 - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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