FCI25N60N Tech Spezifikatioune
onsemi - FCI25N60N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FCI25N60N
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I2PAK (TO-262) | |
Serie | SupreMOS™ | |
Rds On (Max) @ Id, Vgs | 125mOhm @ 12.5A, 10V | |
Power Dissipation (Max) | 216W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3352 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Tc) | |
Basis Produktnummer | FCI25 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FCI25N60N.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FCI25N60N | FCI25N60N-F102 | FCI25N60N | FCI25N60N-F102 |
Hiersteller | onsemi | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V | 74 nC @ 10 V | 74 nC @ 10 V | 74 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | FCI25 | FCI25N60 | FCI25 | - |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Tc) | 25A (Tc) | 25A (Tc) | 25A (Tc) |
Package protegéieren | Tube | Tube | Bulk | Bulk |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Serie | SupreMOS™ | SupreMOS™ | SupreMOS™ | SupreMOS™ |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Rds On (Max) @ Id, Vgs | 125mOhm @ 12.5A, 10V | 125mOhm @ 12.5A, 10V | 125mOhm @ 12.5A, 10V | 125mOhm @ 12.5A, 10V |
Power Dissipation (Max) | 216W (Tc) | 216W (Tc) | 216W (Tc) | 216W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) |
Input Capacitance (Ciss) (Max) @ Vds | 3352 pF @ 100 V | 3352 pF @ 100 V | 3352 pF @ 100 V | 3352 pF @ 100 V |
Eroflueden FCI25N60N PDF DataDhusts an onsemi Dokumentatioun fir FCI25N60N - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.