FCH190N65F-F155 Tech Spezifikatioune
onsemi - FCH190N65F-F155 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FCH190N65F-F155
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 5V @ 2mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247-3 | |
| Serie | FRFET®, SuperFET® II | |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V | |
| Power Dissipation (Max) | 208W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3225 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 650 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20.6A (Tc) | |
| Basis Produktnummer | FCH190 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FCH190N65F-F155.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FCH190N65F-F155 | FCH165N65S3R0-F155 | FCH170N60 | FCH150N65F-F155 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Input Capacitance (Ciss) (Max) @ Vds | 3225 pF @ 100 V | 1500 pF @ 400 V | 2860 pF @ 380 V | 3737 pF @ 100 V |
| Entworf fir Source Voltage (Vdss) | 650 V | 650 V | 600 V | 650 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20.6A (Tc) | 19A (Tc) | 22A (Tc) | 24A (Tc) |
| Vgs (th) (Max) @ Id | 5V @ 2mA | 4.5V @ 1.9mA | 3.5V @ 250µA | 5V @ 2.4mA |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V | 165mOhm @ 9.5A, 10V | 170mOhm @ 11A, 10V | 150mOhm @ 12A, 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | FRFET®, SuperFET® II | SuperFET® III | SuperFET® II | SuperFET® II |
| Basis Produktnummer | FCH190 | FCH165 | FCH170 | FCH150 |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Vgs (Max) | ±20V | ±30V | ±20V | ±20V |
| Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Power Dissipation (Max) | 208W (Tc) | 154W (Tc) | 227W (Tc) | 298W (Tc) |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V | 39 nC @ 10 V | 55 nC @ 10 V | 94 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| FET Feature | - | - | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package protegéieren | Tube | Tube | Tube | Tube |
Eroflueden FCH190N65F-F155 PDF DataDhusts an onsemi Dokumentatioun fir FCH190N65F-F155 - onsemi.
FCH20A10GSHINDENGEFCH165N65S3R0-F155onsemiMOSFET N-CH 650V 19A TO247-3FCH190N65FAMI Semiconductor/onsemiFCH2012F-1RONTAI-TECHFCH20A10NIECFCH20A12SHINFCH170N60onsemiMOSFET N-CH 600V 22A TO247-3FCH150N65F_F155AMI Semiconductor/onsemiFCH150N65F-F155onsemiMOSFET N-CH 650V 24A TO247
FCH20A15KYOCERA AVXDIODE SCHOT 150V 20A TO220 FFCH165N65S3R0-155AMI Semiconductor/onsemiFCH165N60EonsemiMOSFET N-CH 600V 23A TO247-3FCH20A04NIECFCH20A06NIEC
FCH170N60Fairchild SemiconductorMOSFET N-CH 600V 22A TO247-3FCH16P10QNIECFCH190N65FF155Fairchild (onsemi)FCH20A03LNihon Inter| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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