FCD900N60Z Tech Spezifikatioune
onsemi - FCD900N60Z technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FCD900N60Z
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 3.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | SuperFET® II | |
Rds On (Max) @ Id, Vgs | 900mOhm @ 2.3A, 10V | |
Power Dissipation (Max) | 52W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.5A (Tc) | |
Basis Produktnummer | FCD900 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FCD900N60Z.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FCD900N60Z | FCD600N65S3R0 | FCD620N60ZF | FCD900N60Z |
Hiersteller | onsemi | onsemi | onsemi | Fairchild Semiconductor |
Vgs (th) (Max) @ Id | 3.5V @ 250µA | 4.5V @ 600µA | 5V @ 250µA | 3.5V @ 250µA |
Basis Produktnummer | FCD900 | FCD600 | FCD620 | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 600 V | 650 V | 600 V | 600 V |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | TO-252AA | D-PAK (TO-252) | TO-252AA | TO-252, (D-Pak) |
Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 25 V | 465 pF @ 400 V | 1135 pF @ 25 V | 720 pF @ 25 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±20V | ±30V | ±20V | ±20V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Power Dissipation (Max) | 52W (Tc) | 54W (Tc) | 89W (Tc) | 52W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.5A (Tc) | 6A (Tc) | 7.3A (Tc) | 4.5A (Tc) |
Rds On (Max) @ Id, Vgs | 900mOhm @ 2.3A, 10V | 600mOhm @ 3A, 10V | 620mOhm @ 3.6A, 10V | 900mOhm @ 2.3A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | SuperFET® II | SuperFET® III | HiPerFET™, Polar™ | SuperFET® II |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | 11 nC @ 10 V | 36 nC @ 10 V | 17 nC @ 10 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
Eroflueden FCD900N60Z PDF DataDhusts an onsemi Dokumentatioun fir FCD900N60Z - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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