EMH2408-TL-H Tech Spezifikatioune
onsemi - EMH2408-TL-H technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - EMH2408-TL-H
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | - | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-EMH | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4A, 4.5V | |
| Power - Max | 1.2W | |
| Package / Case | 8-SMD, Flat Lead | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | EMH2408 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi EMH2408-TL-H.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | EMH2408-TL-H | EMH2314-TL-H | EMH2308-TL-E | EMH2417R-TL-H |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Power - Max | 1.2W | 1.2W | 1.2W | 1.3W |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | 8-EMH | 8-EMH | 8-EMH | SOT-383FL, EMH8 |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | - | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4A, 4.5V | 37mOhm @ 2.5A, 4.5V | 85mOhm @ 3A, 4.5V | 10mOhm @ 5A, 4.5V |
| Serie | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A | 5A | 3A | 11A |
| Package / Case | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead |
| Vgs (th) (Max) @ Id | - | - | - | 1.3V @ 1mA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate, 2.5V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 4.5V | 12nC @ 4.5V | 4nC @ 4.5V | 16nC @ 4.5V |
| Konfiguratioun | 2 N-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 N-Channel (Dual) Common Drain |
| Entworf fir Source Voltage (Vdss) | 20V | 12V | 20V | 12V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Basis Produktnummer | EMH2408 | EMH2314 | EMH2308 | EMH2417 |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 10V | 1300pF @ 6V | 320pF @ 10V | - |
Eroflueden EMH2408-TL-H PDF DataDhusts an onsemi Dokumentatioun fir EMH2408-TL-H - onsemi.
EMH2314-TL-HonsemiMOSFET 2P-CH 12V 5A EMH8EMH2308-TL-EonsemiMOSFET 2P-CH 20V 3A ECH8
EMH2405-TL-EAMI Semiconductor/onsemiEMH2412 MOSAMI Semiconductor/onsemiEMH2417R-TL-HonsemiMOSFET 2N-CH 12V 11A EMH8EMH2418RAMI Semiconductor/onsemiEMH2411RAMI Semiconductor/onsemiEMH2418R-TL-HonsemiMOSFET 2N-CH 24V 9A EMH8
EMH25 FSAT2RLAPIS TechnologyEMH2412-TL-HSanyoN-CHANNEL MOSFETEMH2407-TL-EAMI Semiconductor/onsemiEMH2308-TL-HonsemiMOSFET 2P-CH 20V 3A EMH8EMH2407R-TL-HAMI Semiconductor/onsemiEMH2418R-TLAMI Semiconductor/onsemiEMH2407-TL-HonsemiMOSFET 2N-CH 20V 6A EMH8EMH2407-TLAMI Semiconductor/onsemiEMH2407-S-TL-HonsemiMOSFET 2N-CH 20V 6A EMH8EMH2417R-HAMI Semiconductor/onsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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