EFC4618R-TR Tech Spezifikatioune
onsemi - EFC4618R-TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - EFC4618R-TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | - | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | EFCP1818-4CC-037 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Power - Max | 1.6W | |
| Package / Case | 4-XFBGA, FCBGA | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | - | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | EFC4618 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi EFC4618R-TR.
| Produktiounsattriff |  |
|
 |
|
|---|---|---|---|---|
| Part Number | EFC4618R-TR | EFC4618R-P-TR | EFC4621R-TR | EFC4626R-TR |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Supplier Device Package | EFCP1818-4CC-037 | EFCP1818-4CC-037 | EFCP1616-4CE-022 | 4-BGA (1x1) |
| Entworf fir Source Voltage (Vdss) | - | - | - | - |
| FET Feature | - | Logic Level Gate, 2.5V Drive | Logic Level Gate, 2.5V Drive | Logic Level Gate, 2.5V Drive |
| Vgs (th) (Max) @ Id | - | - | - | - |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) | 2 N-Channel (Dual) Common Drain |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | - | - | - |
| Basis Produktnummer | EFC4618 | EFC4618 | EFC4621 | EFC4626 |
| Package / Case | 4-XFBGA, FCBGA | 4-XFBGA, FCBGA | 4-XFBGA, FCBGA | 4-XFBGA |
| Rds On (Max) @ Id, Vgs | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | - | 25.4nC @ 4.5V | 29nC @ 4.5V | 7.5nC @ 4.5V |
| Serie | - | - | - | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power - Max | 1.6W | 1.6W | 1.6W | 1.4W |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden EFC4618R-TR PDF DataDhusts an onsemi Dokumentatioun fir EFC4618R-TR - onsemi.
EFC4615R-TRonsemiMOSFET N-CH 24V 6A EFCPEFC4621RAMI Semiconductor/onsemiEFC4618RAMI Semiconductor/onsemiEFC4618R-BAMI Semiconductor/onsemiEFC4618R-P-TRonsemiMOSFET 2N-CH EFCP1818EFC4618R-CAMI Semiconductor/onsemiEFC4622R-W-NAMI Semiconductor/onsemiEFC4624R-TRAMI Semiconductor/onsemiEFC4612R-TRonsemiMOSFET N-CH 24V 6A EFCPEFC4618R-P-TR MOSAMI Semiconductor/onsemiEFC4621R-TRonsemiMOSFET 2N-CH EFCPEFC4626R-TRonsemiMOSFET 2N-CH 24V 5A CSP4EFC4612R-S-TRonsemiDUAL N-CHANNEL POWER MOSFET FOREFC4619R-TRonsemiMOSFET 2N-CH EFCPEFC4623R-TRAMI Semiconductor/onsemiEFC4626RONsemiEFC4627R-A-TRonsemiMOSFET 2N-CH 12V 6A CSP4EFC4618R-EFCPAMI Semiconductor/onsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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