EFC2J013NUZTDG Tech Spezifikatioune
onsemi - EFC2J013NUZTDG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - EFC2J013NUZTDG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 1.3V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-WLCSP (2x1.49) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Power - Max | 1.8W (Ta) | |
| Package / Case | 6-SMD, No Lead | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Gate Charge (Qg) (Max) @ Vgs | 37nC @ 4.5V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | - | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | |
| Konfiguratioun | 2 N-Channel (Dual) Common Drain | |
| Basis Produktnummer | EFC2J013 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi EFC2J013NUZTDG.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | EFC2J013NUZTDG | EFC4601-M-TR | EFC2K102ANUZTDG | EFC2J004NUZTDG |
| Hiersteller | onsemi | Sanyo | onsemi | onsemi |
| Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
| Basis Produktnummer | EFC2J013 | EFC4601 | EFC2K102 | EFC2J004 |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | - | - | 12V | - |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | - | - |
| Vgs (th) (Max) @ Id | 1.3V @ 1mA | - | 1.3V @ 1mA | - |
| Rds On (Max) @ Id, Vgs | - | - | 2.75mOhm @ 5A, 4.5V | - |
| Konfiguratioun | 2 N-Channel (Dual) Common Drain | - | 2 N-Channel (Dual) | - |
| Mounting Type | Surface Mount | - | Surface Mount | - |
| Serie | - | * | - | - |
| Operatioun Temperatur | 150°C (TJ) | - | 150°C (TJ) | - |
| Power - Max | 1.8W (Ta) | - | 3.1W (Ta) | - |
| Supplier Device Package | 6-WLCSP (2x1.49) | - | 10-WLCSP (2.98x1.49) | - |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | - |
| Package / Case | 6-SMD, No Lead | - | 10-SMD, No Lead | - |
| Gate Charge (Qg) (Max) @ Vgs | 37nC @ 4.5V | - | 42nC @ 3.8V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | - | 33A (Ta) | - |
Eroflueden EFC2J013NUZTDG PDF DataDhusts an onsemi Dokumentatioun fir EFC2J013NUZTDG - onsemi.
EFC4601-M-TRSanyoN-CHANNEL MOSFETEFC2K102AUZTDGAMI Semiconductor/onsemiEFC2K102ANUZTDGonsemiNCH 12V 33A WLCSP DUALEFC4612R-TRonsemiMOSFET N-CH 24V 6A EFCPEFC4601R-M-TRonsemiNCH 2.5V DRIVE SERIESEFC4612AMI Semiconductor/onsemiEFC2J003MUZTCG-E2AMI Semiconductor/onsemiEFC2J004NUZTDGonsemiMOSFET NCH 12V WLCSP6 DUALEFC4602-S-TRAMI Semiconductor/onsemiEFC2J013NUZONsemiEFC4301-TRAMI Semiconductor/onsemiEFC4615R-TRonsemiMOSFET N-CH 24V 6A EFCPEFC19FPOWERTHERMIGBT ModuleEFC4611-TRonsemiN-CHANNEL POWER MOSFETEFC2K102NUZTDGONsemiEFC4612R-S-TRonsemiDUAL N-CHANNEL POWER MOSFET FOREFC2J001NUZAMI Semiconductor/onsemi
EFC20GCrydom / Sensata TechnologiesIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.