ECH8602M-TL-H Tech Spezifikatioune
onsemi - ECH8602M-TL-H technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - ECH8602M-TL-H
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | - | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-ECH | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 3A, 4.5V | |
| Power - Max | 1.5W | |
| Package / Case | 8-SMD, Flat Lead | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | ECH8602 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi ECH8602M-TL-H.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | ECH8602M-TL-H | ECH8601M-TL-H-P | ECH8601R-TL-E | ECH8601R-V-TL-E |
| Hiersteller | onsemi | onsemi | ON/SANYO | AMI Semiconductor/onsemi |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | - | - |
| Power - Max | 1.5W | - | - | - |
| Package / Case | 8-SMD, Flat Lead | 8-SMD, Flat Lead | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A | 8A (Ta) | - | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 3A, 4.5V | 23mOhm @ 4A, 4.5V | - | - |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) Common Drain | - | - |
| Basis Produktnummer | ECH8602 | ECH8601 | - | - |
| FET Feature | Logic Level Gate | Logic Level Gate, 2.5V Drive | - | - |
| Serie | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Supplier Device Package | 8-ECH | 8-ECH | - | - |
| Vgs (th) (Max) @ Id | - | 1.3V @ 1mA | - | - |
| Entworf fir Source Voltage (Vdss) | 30V | 24V | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V | 7.5nC @ 4.5V | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
Eroflueden ECH8602M-TL-H PDF DataDhusts an onsemi Dokumentatioun fir ECH8602M-TL-H - onsemi.
ECH8601R-TL-EON/SANYOECH8601R-V-TL-EAMI Semiconductor/onsemiECH8601M-TL-H-PonsemiMOSFET 2N-CHECH8602MVBSEMIECH8606-V-TL-EAMI Semiconductor/onsemiECH8606AMI Semiconductor/onsemiECH8601RAMI Semiconductor/onsemiECH8609-TL-EAMI Semiconductor/onsemiECH8607-TL-ESanyoN-CHANNEL SILICON MOSFETECH8607-TLAMI Semiconductor/onsemiECH8605-TL-HAMI Semiconductor/onsemiECH8601R-TL-EXonsemiNCH+NCH 2.5V DRIVE SERIESECH8601R-B-TL-HAMI Semiconductor/onsemiECH8608-TL-EAMI Semiconductor/onsemiECH8601R-H-TL-EAMI Semiconductor/onsemiECH8603-TL-EAMI Semiconductor/onsemiECH8606-TL-EECH8601R-TL-HAMI Semiconductor/onsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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