DTA123EM3T5G Tech Spezifikatioune
onsemi - DTA123EM3T5G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - DTA123EM3T5G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA | |
| Transistor Type | PNP - Pre-Biased | |
| Supplier Device Package | SOT-723 | |
| Serie | - | |
| Resistor - Emitterbasis (R2) | 2.2 kOhms | |
| Resistor - Base (R1) | 2.2 kOhms |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Power - Max | 260 mW | |
| Package / Case | SOT-723 | |
| Package protegéieren | Tape & Reel (TR) | |
| Mounting Type | Surface Mount | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V | |
| Aktuell - Kollektorat Cutoff (Max) | 500nA | |
| Aktuell - Sammler (Ic) (Max) | 100 mA | |
| Basis Produktnummer | DTA123 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi DTA123EM3T5G.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | DTA123EM3T5G | DTA123EETL | DTA123EKAT146 | DTA123JE |
| Hiersteller | onsemi | Rohm Semiconductor | Rohm Semiconductor | Yangjie Technology |
| Transistor Type | PNP - Pre-Biased | PNP - Pre-Biased | PNP - Pre-Biased | PNP - Pre-Biased + Diode |
| Package / Case | SOT-723 | SC-75, SOT-416 | TO-236-3, SC-59, SOT-23-3 | SOT-523 |
| Resistor - Emitterbasis (R2) | 2.2 kOhms | 2.2 kOhms | 2.2 kOhms | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Basis Produktnummer | DTA123 | DTA123 | DTA123 | DTA123 |
| Resistor - Base (R1) | 2.2 kOhms | 2.2 kOhms | 2.2 kOhms | 2.2 kOhms |
| Aktuell - Kollektorat Cutoff (Max) | 500nA | 500nA | 500nA (ICBO) | 500nA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA | 300mV @ 500µA, 10mA | 300mV @ 500µA, 10mA | 300mV @ 250µA, 5mA |
| Supplier Device Package | SOT-723 | EMT3 | SMT3 | SOT-523 |
| Serie | - | - | - | - |
| Power - Max | 260 mW | 150 mW | 200 mW | 150 mW |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V | 50 V | 50 V |
| Aktuell - Sammler (Ic) (Max) | 100 mA | 100 mA | 100 mA | 100 mA |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V | 20 @ 20mA, 5V | 20 @ 20mA, 5V | 80 @ 10mA, 5V |
Eroflueden DTA123EM3T5G PDF DataDhusts an onsemi Dokumentatioun fir DTA123EM3T5G - onsemi.
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DTA123EET1onsemiTRANS PREBIAS PNP 200MW SC75DTA123EKALAPIS TechnologyDTA123EUAT106Rohm SemiconductorTRANS PREBIAS PNP 200MW UMT3DTA123EKLAPIS TechnologyDTA123ESATPLAPIS Technology
DTA123JCAYangjie TechnologyTransistors - Bipolar (BJT) - Si| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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