CPH3327-TL-E Tech Spezifikatioune
onsemi - CPH3327-TL-E technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - CPH3327-TL-E
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | - | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 3-CPH | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1.45Ohm @ 300mA, 10V | |
| Power Dissipation (Max) | 1W (Ta) | |
| Package / Case | SC-96 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 245 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 600mA (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi CPH3327-TL-E.
| Produktiounsattriff |  |
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|
|
|---|---|---|---|---|
| Part Number | CPH3327-TL-E | CPH3341-TL-E | CPH3323-TL-E | CPH3340-TL-E |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | - | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.45Ohm @ 300mA, 10V | 45mOhm @ 2.5A, 10V | - | 45mOhm @ 2.5A, 4V |
| Mounting Type | Surface Mount | Surface Mount | - | Surface Mount |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Supplier Device Package | 3-CPH | 3-CPH | - | 3-CPH |
| Package / Case | SC-96 | SC-96 | - | SC-96 |
| Input Capacitance (Ciss) (Max) @ Vds | 245 pF @ 20 V | 1115 pF @ 10 V | - | 1875 pF @ 10 V |
| Power Dissipation (Max) | 1W (Ta) | 1.2W (Ta) | - | 1.2W (Ta) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 100 V | 30 V | - | 20 V |
| Serie | - | - | * | - |
| FET Typ | P-Channel | P-Channel | - | P-Channel |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 600mA (Ta) | 5A (Ta) | - | 5A (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V | 21.8 nC @ 10 V | - | 16 nC @ 4 V |
| Vgs (th) (Max) @ Id | - | - | - | - |
CPH3321-TL-EAMI Semiconductor/onsemiCPH3341-TL-EonsemiMOSFET P-CH 30V 5A 3CPHCPH3323-TL-EonsemiP-CHANNEL SILICON MOSFETCPH3338-TAMI Semiconductor/onsemiCPH3326-TLAMI Semiconductor/onsemiCPH3326-TL-EAMI Semiconductor/onsemiCPH3338-T-TL-HonsemiPCH 4V DRIVE SERIESCPH3323-TLAMI Semiconductor/onsemiCPH3338AMI Semiconductor/onsemiCPH3327-TLAMI Semiconductor/onsemiCPH3337-TL-ECPH3340-TL-EonsemiMOSFET P-CH 20V 5A 3CPHCPH3331-TL-ESanyoP-CHANNEL SILICON MOSFET FOR GENCPH3322-TL-EonsemiPCH 4V DRIVE SERIESCPH3337-TL-HAMI Semiconductor/onsemiCPH3324-TL-EonsemiMOSFET P-CH 60V 1.2A 3CPHCPH3338-TL-EonsemiPCH 4V DRIVE SERIESCPH3325-TL-EonsemiPCH 4V DRIVE SERIES| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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