BUB323ZG Tech Spezifikatioune
onsemi - BUB323ZG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - BUB323ZG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 350 V | |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 250mA, 10A | |
| Transistor Type | NPN - Darlington | |
| Supplier Device Package | D²PAK | |
| Serie | - | |
| Power - Max | 150 W | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | 2MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 500 @ 5A, 4.6V | |
| Aktuell - Kollektorat Cutoff (Max) | 100µA | |
| Aktuell - Sammler (Ic) (Max) | 10 A | |
| Basis Produktnummer | BUB323 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi BUB323ZG.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | BUB323ZG | BUX48A | ZXTP2025FTA | 2SC4116-GR,LF |
| Hiersteller | onsemi | Solid State Inc. | Diodes Incorporated | Toshiba Semiconductor and Storage |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 500 @ 5A, 4.6V | - | 200 @ 500mA, 2V | 70 @ 2mA, 6V |
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | -65°C ~ 200°C (TJ) | -55°C ~ 150°C (TJ) | 125°C (TJ) |
| Supplier Device Package | D²PAK | TO-3 | SOT-23-3 | SC-70 |
| Basis Produktnummer | BUB323 | - | ZXTP2025 | 2SC4116 |
| Power - Max | 150 W | 175 W | 1.2 W | 100 mW |
| Serie | - | SWITCHMODE | - | - |
| Frequenz - Iwwergang | 2MHz | - | 190MHz | 80MHz |
| Package protegéieren | Tube | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - Kollektorat Cutoff (Max) | 100µA | 500µA | 20nA (ICBO) | 100nA (ICBO) |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 250mA, 10A | 5V @ 2.4A, 12A | 200mV @ 500mA, 5A | 250mV @ 10mA, 100mA |
| Transistor Type | NPN - Darlington | NPN | PNP | NPN |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-204AA, TO-3 | TO-236-3, SC-59, SOT-23-3 | SC-70, SOT-323 |
| Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
| Voltage - Collector Emitter Breakdown (Max) | 350 V | 450 V | 50 V | 50 V |
| Aktuell - Sammler (Ic) (Max) | 10 A | 15 A | 5 A | 150 mA |
Eroflueden BUB323ZG PDF DataDhusts an onsemi Dokumentatioun fir BUB323ZG - onsemi.
BUX48ASolid State Inc.TRANS NPN 450V 15A TO3ZXTP2025FTADiodes IncorporatedTRANS PNP 50V 5A SOT23-32SC4116-GR,LFToshiba Semiconductor and StorageTRANS NPN 50V 0.15A SC70
2N5400onsemiTRANS PNP 120V 0.6A TO92
MJE521GonsemiTRANS NPN 40V 4A TO126
KSH41CTFonsemiTRANS NPN 100V 6A DPAKBUB323
MCH3106-S-TL-EonsemiTRANS PNP 12V 3A 3MCPH
KSE45H11TUonsemiTRANS PNP 80V 10A TO220-3
BC846AMTFonsemiTRANS NPN 65V 0.1A SOT23-3BC817-25W-7Diodes IncorporatedTRANS NPN 45V 0.5A SOT323
2N2904ATexas InstrumentsSMALL SIGNAL BIPOLAR TRANS PNP
FCX605TADiodes IncorporatedTRANS NPN DARL 120V 1A SOT89-3
BUB941ZTT4STMicroelectronics
FJD3305H1TMonsemiTRANS NPN 400V 4A TO252AA
BUB323ZT4GONsemiBUB323ZonsemiTRANS NPN DARL 350V 10A D2PAK
PBSS5350T,215NXP SemiconductorsNOW NEXPERIA PBSS5350T - SMALL S| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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