BD433S Tech Spezifikatioune
onsemi - BD433S technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - BD433S
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 22 V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A | |
| Transistor Type | NPN | |
| Supplier Device Package | TO-126-3 | |
| Serie | - | |
| Power - Max | 36 W | |
| Package / Case | TO-225AA, TO-126-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Frequenz - Iwwergang | 3MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 5V | |
| Aktuell - Kollektorat Cutoff (Max) | 100µA | |
| Aktuell - Sammler (Ic) (Max) | 4 A | |
| Basis Produktnummer | BD433 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi BD433S.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | BD433S | BD434STU | BD435G | BD433S |
| Hiersteller | onsemi | onsemi | onsemi | Fairchild Semiconductor |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A | 500mV @ 200mA, 2A | 500mV @ 200mA, 2A | 500mV @ 200mA, 2A |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Basis Produktnummer | BD433 | BD434 | BD435 | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Package protegéieren | Bulk | Tube | Bulk | Bulk |
| Aktuell - Sammler (Ic) (Max) | 4 A | 4 A | 4 A | 4 A |
| Package / Case | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 |
| Voltage - Collector Emitter Breakdown (Max) | 22 V | 22 V | 32 V | 22 V |
| Supplier Device Package | TO-126-3 | TO-126-3 | TO-126 | TO-126-3 |
| Power - Max | 36 W | 36 W | 36 W | 36 W |
| Serie | - | - | - | - |
| Aktuell - Kollektorat Cutoff (Max) | 100µA | 100µA | 100µA (ICBO) | 100µA |
| Frequenz - Iwwergang | 3MHz | 3MHz | 3MHz | 3MHz |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 5V | 40 @ 10mA, 5V | 85 @ 500mA, 1V | 40 @ 10mA, 5V |
| Transistor Type | NPN | PNP | NPN | NPN |
Eroflueden BD433S PDF DataDhusts an onsemi Dokumentatioun fir BD433S - onsemi.
BD433M2EFJ-CE2Rohm SemiconductorIC REG LINEAR 3.3V 200MA 8HTSOP
BD435-16STMicroelectronics
BD433M5WFPJ-CZE2Rohm SemiconductorIC REG LIN 3.3V 500MA TO252-J5FBD434STUonsemiTRANS PNP 22V 4A TO126-3BD429A-GDEIBD429BDEIBD435GonsemiTRANS NPN 32V 4A TO126
BD433M5FP-CE2Rohm SemiconductorIC REG LINEAR 3.3V 500MA TO252-3BD433SFairchild SemiconductorTRANS NPN 22V 4A TO126-3BD435NSTMicroelectronicsBD433M2WEFJ-CE2Rohm SemiconductorIC REG LINEAR 3.3V 200MA 8HTSOP
BD433M5WFP2-CZE2Rohm SemiconductorIC REG LIN 3.3V 500MA TO263-5FBD434SFairchild SemiconductorPOWER BIPOLAR TRANSISTOR, 4A, 22BD434STUFairchild SemiconductorTRANS PNP 22V 4A TO126-3
BD433M2WFP3-CE2Rohm SemiconductorIC REG LIN 3.3V 200MA SOT223-4FBD434SonsemiTRANS PNP 22V 4A TO126-3BD433M2FP3-CE2Rohm SemiconductorIC REG LIN 3.3V 200MA SOT223-4FBD435 100-250| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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