BD241C Tech Spezifikatioune
onsemi - BD241C technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - BD241C
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 600mA, 3A | |
| Transistor Type | NPN | |
| Supplier Device Package | TO-220 | |
| Serie | - | |
| Power - Max | 40 W | |
| Package / Case | TO-220-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Frequenz - Iwwergang | 3MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 25 @ 1A, 4V | |
| Aktuell - Kollektorat Cutoff (Max) | 300µA | |
| Aktuell - Sammler (Ic) (Max) | 3 A | |
| Basis Produktnummer | BD241 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi BD241C.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | BD241C | BD241BTU | BD241A | BD241CTU |
| Hiersteller | onsemi | onsemi | Harris Corporation | Fairchild Semiconductor |
| Package protegéieren | Tube | Tube | Tube | Bulk |
| Aktuell - Kollektorat Cutoff (Max) | 300µA | 300µA | 300µA | 300µA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 80 V | 60 V | 100 V |
| Serie | - | - | - | - |
| Transistor Type | NPN | NPN | NPN | NPN |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Basis Produktnummer | BD241 | BD241 | - | BD241 |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 25 @ 1A, 4V | 25 @ 1A, 4V | 25 @ 1A, 4V | 25 @ 1A, 4V |
| Supplier Device Package | TO-220 | TO-220-3 | TO-220AB | TO-220-3 |
| Frequenz - Iwwergang | 3MHz | - | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Aktuell - Sammler (Ic) (Max) | 3 A | 3 A | 3 A | 3 A |
| Power - Max | 40 W | 40 W | 40 W | 40 W |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 600mA, 3A | 1.2V @ 600mA, 3A | 1.2V @ 600mA, 3A | 1.2V @ 600mA, 3A |
Eroflueden BD241C PDF DataDhusts an onsemi Dokumentatioun fir BD241C - onsemi.
BD241BTUonsemiTRANS NPN 80V 3A TO220-3BD241AHarris CorporationTRANS NPN 60V 3A TO220AB
BD2425J50200AHFTTM Technologies, Inc.BALUN 2.4GHZ-2.5GHZ 50/200 0805BD241CTUFairchild SemiconductorTRANS NPN 100V 3A TO220-3BD241BFPFairchild (onsemi)BD240CHarris CorporationPNP EPITAXIAL SILICON TRANSISTORBD241CTUonsemiTRANS NPN 100V 3A TO220-3
BD241ASTMicroelectronicsTRANS NPN 60V 3A TO220
BD2425J50100A00Anaren Wireless / TTM TechnologiesBD241BTUFairchild SemiconductorTRANS NPN 80V 3A TO220-3BD2425J5050AAnaren Wireless / TTM TechnologiesBD2425J50200A00Anaren Wireless / TTM TechnologiesBD240CTUonsemiTRANS PNP 100V 2A TO220-3BD240BTUonsemiTRANS PNP 80V 2A TO220-3BD2425J50100AHFTTM Technologies, Inc.BALUN 2.4GHZ-2.5GHZ 50/100 0805BD241CGonsemiTRANS NPN 100V 3A TO220BD241CSTMicroelectronicsTRANS NPN 100V 3A TO220
BD240GAMI Semiconductor/onsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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