BAV21TR Tech Spezifikatioune
onsemi - BAV21TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - BAV21TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 200 mA | |
| Voltage - DC Reverse (Vr) (Max) | 250 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-35 | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Serie | - | |
| Reverse Recovery Time (trr) | 50 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AH, DO-35, Axial | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | 175°C (Max) | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 100 nA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | |
| Capacitance @ Vr, F. | 5pF @ 0V, 1MHz | |
| Basis Produktnummer | BAV21 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi BAV21TR.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | BAV21TR | BAV21-TAP | BAV21W-7-G | BAV21HWF-7 |
| Hiersteller | onsemi | Vishay General Semiconductor - Diodes Division | Diodes Incorporated | Diodes Incorporated |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
| Reverse Recovery Time (trr) | 50 ns | 50 ns | 50 ns | 50 ns |
| Basis Produktnummer | BAV21 | BAV21 | BAV21 | BAV21 |
| Capacitance @ Vr, F. | 5pF @ 0V, 1MHz | 1.5pF @ 0V, 1MHz | 5pF @ 0V, 1MHz | 5pF @ 0V, 1MHz |
| Aktuell - Reverse Leakage @ Vr | 100 nA @ 200 V | 100 nA @ 150 V | 100 nA @ 200 V | 100 nA @ 200 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 200 mA | 1 V @ 100 mA | 1.25 V @ 200 mA | 1.25 V @ 200 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed | Fast Recovery =< 500ns, > 200mA (Io) | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed |
| Serie | - | Automotive, AEC-Q101 | - | Automotive, AEC-Q101 |
| Operatiounstemperatur - Junction | 175°C (Max) | 175°C (Max) | -65°C ~ 150°C | -65°C ~ 150°C |
| Technologie | Standard | Standard | Standard | Standard |
| Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | SOD-123 | SOD-123F |
| Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | 250mA | 200mA | 200mA |
| Voltage - DC Reverse (Vr) (Max) | 250 V | 200 V | 200 V | 200 V |
| Supplier Device Package | DO-35 | DO-35 (DO-204AH) | SOD-123 | SOD-123F |
Eroflueden BAV21TR PDF DataDhusts an onsemi Dokumentatioun fir BAV21TR - onsemi.
BAV21-TAPVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 250MA DO35BAV21W-7-GDiodes IncorporatedDIODE GEN PURP 200V 200MA SOD123
BAV21PSECOCSBAV21BAV21 T3CJBAV21HWF-7Diodes IncorporatedDIODE GP 200V 200MA SOD123FBAV21W T/RPANJIT
BAV21,113Nexperia
BAV21WSMC Diode SolutionsDIODE GEN PURP 200V 200MA SOD123
BAV21TRFairchild SemiconductorDIODE GEN PURP 250V 200MA DO35BAV21ASECOSGMBHBAV21W-7-FDiodes IncorporatedDIODE GEN PURP 200V 200MA SOD123BAV21W T3CJBAV21W-AUPANJIT
BAV20WS_R1_00001Panjit International Inc.DIODE GEN PURP 150V 200MA SOD323BAV21WANBON SEMICONDUCTOR (INT'L) LIMITED200MA SURFACE MOUNT SWITCHING DIBAV21W-7Diodes IncorporatedDIODE GEN PURP 200V 200MA SOD123
BAV21WTaiwan Semiconductor CorporationSOD-123F, 250V, 0.2A, SWITCHING| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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