ATP104-TL-H Tech Spezifikatioune
Sanyo - ATP104-TL-H technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Sanyo - ATP104-TL-H
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | - | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | ATPAK | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 38A, 10V | |
| Power Dissipation (Max) | 60W (Tc) | |
| Package / Case | ATPAK (2 Leads+Tab) | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Sanyo ATP104-TL-H.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | ATP104-TL-H | ATP112-TL-H | ATP104-TL-HX | ATP102-TL-H |
| Hiersteller | Sanyo | onsemi | onsemi | Sanyo |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 38A, 10V | 43mOhm @ 13A, 10V | 8.4mOhm @ 38A, 10V | 18.5mOhm @ 20A, 10V |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4V, 10V | 4.5V, 10V | 4.5V, 10V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V | 33.5 nC @ 10 V | 76 nC @ 10 V | 34 nC @ 10 V |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Ta) | 25A (Ta) | 75A (Ta) | 40A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 10 V | 1450 pF @ 20 V | 3950 pF @ 10 V | 1490 pF @ 10 V |
| Supplier Device Package | ATPAK | ATPAK | ATPAK | ATPAK |
| Serie | - | - | - | - |
| Power Dissipation (Max) | 60W (Tc) | 40W (Tc) | 60W (Tc) | 40W (Tc) |
| Entworf fir Source Voltage (Vdss) | 30 V | 60 V | 30 V | 30 V |
| Vgs (th) (Max) @ Id | - | - | - | - |
| Package / Case | ATPAK (2 Leads+Tab) | ATPAK (2 Leads+Tab) | ATPAK (2 leads+tab) | ATPAK (2 Leads+Tab) |
ATP112-TL-HonsemiMOSFET P-CH 60V 25A ATPAKATP104-TL-HXonsemiMOSFET P-CH 30V 75A ATPAKATP101-TL-H-T MOSAMI Semiconductor/onsemiATP113-TL-H MOSAMI Semiconductor/onsemiATP101AMI Semiconductor/onsemiATP104AMI Semiconductor/onsemiATP102-TL-HSanyoP-CHANNEL SILICON MOSFET GENERALATP103AMI Semiconductor/onsemiATP107AMI Semiconductor/onsemiATP113-TL-HONsemiATP103-TL-HONsemiATP106AMI Semiconductor/onsemiATP101-TL-HONsemiATP102AMI Semiconductor/onsemiATP106-TL-HonsemiMOSFET P-CH 40V 30A ATPAKATP108-TL-HonsemiMOSFET P-CH 40V 70A ATPAKATP113AMI Semiconductor/onsemiATP101-V-TL-HonsemiMOSFET P-CH 30V 25A ATPAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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