5HP01M-TL-E Tech Spezifikatioune
onsemi - 5HP01M-TL-E technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - 5HP01M-TL-E
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | - | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | MCP | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 22Ohm @ 40mA, 10V | |
| Power Dissipation (Max) | 150mW (Ta) | |
| Package / Case | SC-70, SOT-323 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 6.2 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.32 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
| Entworf fir Source Voltage (Vdss) | 50 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 70mA (Ta) | |
| Basis Produktnummer | 5HP01 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi 5HP01M-TL-E.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | 5HP01M-TL-E | FQD5N50TF | 5HP01M-TL-H | IRFP250MPBF |
| Hiersteller | onsemi | onsemi | onsemi | Infineon Technologies |
| Entworf fir Source Voltage (Vdss) | 50 V | 500 V | 50 V | 200 V |
| Basis Produktnummer | 5HP01 | FQD5 | 5HP01 | IRFP250 |
| Rds On (Max) @ Id, Vgs | 22Ohm @ 40mA, 10V | 1.8Ohm @ 1.75A, 10V | 22Ohm @ 40mA, 10V | 75mOhm @ 18A, 10V |
| Package / Case | SC-70, SOT-323 | TO-252-3, DPak (2 Leads + Tab), SC-63 | SC-70, SOT-323 | TO-247-3 |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
| FET Typ | P-Channel | N-Channel | P-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Serie | - | QFET® | - | HEXFET® |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 70mA (Ta) | 3.5A (Tc) | 70mA (Ta) | 30A (Tc) |
| Power Dissipation (Max) | 150mW (Ta) | 2.5W (Ta), 50W (Tc) | 150mW (Ta) | 214W (Tc) |
| Vgs (Max) | ±20V | ±30V | ±20V | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 1.32 nC @ 10 V | 17 nC @ 10 V | 1.32 nC @ 10 V | 123 nC @ 10 V |
| Vgs (th) (Max) @ Id | - | 5V @ 250µA | - | 4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 6.2 pF @ 10 V | 610 pF @ 25 V | 6.2 pF @ 10 V | 2159 pF @ 25 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
| Supplier Device Package | MCP | TO-252AA | MCP | TO-247AC |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 10V | 4V, 10V | 10V |
Eroflueden 5HP01M-TL-E PDF DataDhusts an onsemi Dokumentatioun fir 5HP01M-TL-E - onsemi.
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BUK9212-55B,118Nexperia USA Inc.MOSFET N-CH 55V 75A DPAK5HP01C-TB-HonsemiMOSFET P-CH 50V 70MA SMD5HP01MAMI Semiconductor/onsemi5HP01SS-TL-EonsemiMOSFET P-CH 50V 70MA SSFP35HP01S-TLAMI Semiconductor/onsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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