2N5961 Tech Spezifikatioune
onsemi - 2N5961 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - 2N5961
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 500µA, 10mA | |
| Transistor Type | NPN | |
| Supplier Device Package | TO-92-3 | |
| Serie | - | |
| Power - Max | 625 mW | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Frequenz - Iwwergang | - | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 150 @ 10mA, 5V | |
| Aktuell - Kollektorat Cutoff (Max) | 2nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 100 mA | |
| Basis Produktnummer | 2N5961 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi 2N5961.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | 2N5961 | 2N5884G | 2N5886 | 2N5884 |
| Hiersteller | onsemi | onsemi | NTE Electronics, Inc | onsemi |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 150 @ 10mA, 5V | 20 @ 10A, 4V | 20 @ 10A, 4V | 20 @ 10A, 4V |
| Power - Max | 625 mW | 200 W | 200 W | 200 W |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) |
| Package protegéieren | Bulk | Tray | Bag | Tray |
| Basis Produktnummer | 2N5961 | 2N5884 | - | 2N5884 |
| Aktuell - Kollektorat Cutoff (Max) | 2nA (ICBO) | 2mA | 2mA | 2mA |
| Transistor Type | NPN | PNP | NPN | PNP |
| Frequenz - Iwwergang | - | 4MHz | 4MHz | 4MHz |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | TO-204AA, TO-3 | TO-204AA, TO-3 | TO-204AA, TO-3 |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | 80 V | 80 V | 80 V |
| Supplier Device Package | TO-92-3 | TO-204 (TO-3) | TO-204 (TO-3) | TO-204 (TO-3) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 500µA, 10mA | 4V @ 6.25A, 25A | 1V @ 1.5A, 15A | 4V @ 6.25A, 25A |
| Aktuell - Sammler (Ic) (Max) | 100 mA | 25 A | 25 A | 25 A |
| Serie | - | - | - | - |
Eroflueden 2N5961 PDF DataDhusts an onsemi Dokumentatioun fir 2N5961 - onsemi.
2N5884GonsemiTRANS PNP 80V 25A TO2042N5886NTE Electronics, IncTRANS NPN 80V 25A TO2042N5884onsemiTRANS PNP 80V 25A TO2042N5928MSCIGBT Module
2N5886Microchip TechnologyPNP POWER TRANSISTOR SILICON AMP2N5927MSCIGBT Module2N5962onsemiTRANS NPN 45V 0.1A TO92-32N5884NTE Electronics, IncTRANS PNP 80V 25A TO2042N5884Solid State Inc.TRANS PNP 80V 25A TO32N5884Microchip TechnologyPNP POWER TRANSISTOR SILICON AMP2N5952onsemiJFET N-CH 30V 8MA TO922N5886GonsemiTRANS NPN 80V 25A TO2042N5968Microchip TechnologyPOWER BJT2N5955Microchip TechnologyTRANS PNP 60V 6A TO662N5879Harris CorporationTRANS PNP 60V 15A TO3
2N5926MicrosemiIGBT Module2N5943MOT2N5879Microchip TechnologyPNP POWER TRANSISTOR SILICON AMP| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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