2N5551RLRMG Tech Spezifikatioune
onsemi - 2N5551RLRMG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - 2N5551RLRMG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 160 V | |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA | |
| Transistor Type | NPN | |
| Supplier Device Package | TO-92 (TO-226) | |
| Serie | - | |
| Power - Max | 625 mW | |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Box (TB) | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Frequenz - Iwwergang | 300MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
| Aktuell - Kollektorat Cutoff (Max) | 50nA (ICBO) | |
| Aktuell - Sammler (Ic) (Max) | 600 mA | |
| Basis Produktnummer | 2N5551 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi 2N5551RLRMG.
| Produktiounsattriff |  |
|
 |
 |
|---|---|---|---|---|
| Part Number | 2N5551RLRMG | 2N5551RLRA | 2N5551YBU | 2N5551YBU |
| Hiersteller | onsemi | onsemi | Fairchild Semiconductor | onsemi |
| Basis Produktnummer | 2N5551 | 2N5551 | - | 2N5551 |
| Supplier Device Package | TO-92 (TO-226) | TO-92 (TO-226) | TO-92-3 | TO-92-3 |
| Package protegéieren | Tape & Box (TB) | Tape & Reel (TR) | Bulk | Bulk |
| Aktuell - Kollektorat Cutoff (Max) | 50nA (ICBO) | 50nA (ICBO) | - | - |
| Power - Max | 625 mW | 625 mW | 625 mW | 625 mW |
| Frequenz - Iwwergang | 300MHz | 300MHz | 100MHz | 100MHz |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | - | - | - | - |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | 80 @ 10mA, 5V | 180 @ 10mA, 5V | 180 @ 10mA, 5V |
| Aktuell - Sammler (Ic) (Max) | 600 mA | 600 mA | 600 mA | 600 mA |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-226-3, TO-92-3 (TO-226AA) | TO-226-3, TO-92-3 (TO-226AA) |
| Voltage - Collector Emitter Breakdown (Max) | 160 V | 160 V | 160 V | 160 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA | 200mV @ 5mA, 50mA | 200mV @ 5mA, 50mA | 200mV @ 5mA, 50mA |
| Transistor Type | NPN | NPN | NPN | NPN |
Eroflueden 2N5551RLRMG PDF DataDhusts an onsemi Dokumentatioun fir 2N5551RLRMG - onsemi.
2N5551RLRAonsemiTRANS NPN 160V 0.6A TO922N5551YBUFairchild SemiconductorTRANS NPN 160V 0.6A TO92-32N5551YBUonsemiTRANS NPN 160V 0.6A TO92-3
2N5551TFRONsemi
2N5551LUTC2N5551BUonsemiTRANS NPN 160V 0.6A TO92-32N5551TAonsemiTRANS NPN 160V 0.6A TO92-32N5551RL1GonsemiTRANS NPN 160V 0.6A TO92
2N5551HTAEC Product (Toshiba Electronic Devices and Stora2N5551RLRAGonsemiTRANS NPN 160V 0.6A TO922N5551S-RTK/PKEC2N5551TAFairchild Semiconductor2N5551 - SMALL SIGNAL BIPOLAR TR2N5551RLRMonsemiTRANS NPN 160V 0.6A TO922N5551G-B-AB3-RUTC2N5551GonsemiTRANS NPN 160V 0.6A TO922N5551S-RTKKEC2N5551YTAonsemiTRANS NPN 160V 0.6A TO92-32N5551RLRPGonsemiTRANS NPN 160V 0.6A TO92| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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