2N5195G Tech Spezifikatioune
onsemi - 2N5195G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - 2N5195G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 1A, 4A | |
| Transistor Type | PNP | |
| Supplier Device Package | TO-126 | |
| Serie | - | |
| Power - Max | 40 W | |
| Package / Case | TO-225AA, TO-126-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Frequenz - Iwwergang | 2MHz | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 20 @ 1.5A, 2V | |
| Aktuell - Kollektorat Cutoff (Max) | 1mA | |
| Aktuell - Sammler (Ic) (Max) | 4 A | |
| Basis Produktnummer | 2N5195 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | Not Applicable |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi 2N5195G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 2N5195G | 2N5192G | 2N5194G | 2N5195 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Power - Max | 40 W | 40 W | 40 W | 40 W |
| Basis Produktnummer | 2N5195 | 2N5192 | 2N5194 | 2N5195 |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 1A, 4A | 1.4V @ 1A, 4A | 1.4V @ 1A, 4A | 600mV @ 150mA, 1.5A |
| Frequenz - Iwwergang | 2MHz | 2MHz | 2MHz | 2MHz |
| Supplier Device Package | TO-126 | TO-126 | TO-126 | TO-126 |
| Package / Case | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 20 @ 1.5A, 2V | 20 @ 1.5A, 2V | 25 @ 1.5A, 2V | 20 @ 1.5A, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 80 V | 60 V | 80 V |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Serie | - | - | - | - |
| Aktuell - Kollektorat Cutoff (Max) | 1mA | 1mA | 1mA | 1mA |
| Transistor Type | PNP | NPN | PNP | PNP |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Aktuell - Sammler (Ic) (Max) | 4 A | 4 A | 4 A | 4 A |
Eroflueden 2N5195G PDF DataDhusts an onsemi Dokumentatioun fir 2N5195G - onsemi.
2N5192GonsemiTRANS NPN 80V 4A TO1262N5194GonsemiTRANS PNP 60V 4A TO1262N5195onsemiTRANS PNP PWR GP 4A 80V TO225AA
2N5195STMicroelectronicsTRANS PNP 80V 4A SOT32-3
2N5204Vishay General Semiconductor - Diodes DivisionSCR 600V 35A TO208AA
2N5210NTE Electronics, IncTRANS NPN 50V 0.05A TO92
2N5204Solid State Inc.TO 48 22 AMP SCR
2N5210onsemiTRANS NPN 50V 0.05A TO922N5193GAMI Semiconductor/onsemi
2N5210Fairchild Semiconductor2N5210 - SMALL SIGNAL BIPOLAR TR2N5192NTE Electronics, IncTRANS NPN 80V 4A TO1262N5192STMicroelectronicsTRANS NPN 80V 4A SOT32-32N5195Solid State Inc.TRANS PNP TO1262N5206Solid State Inc.TO 48 22 AMP SCR2N5205Solid State Inc.TO 48 22 AMP SCR2N5207Solid State Inc.TO 48 22 AMP SCR2N5195NTE Electronics, IncTRANS PNP 80V 4A SOT32-32N5199| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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