1N5820 Tech Spezifikatioune
onsemi - 1N5820 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - 1N5820
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 475 mV @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 20 V | |
| Technologie | Schottky | |
| Supplier Device Package | DO-201AD | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-201AD, Axial |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -65°C ~ 125°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 500 µA @ 20 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | 190pF @ 4V, 1MHz | |
| Basis Produktnummer | 1N5820 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi 1N5820.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | 1N5820 | 1N5820 | 1N5820 | 1N5820-E3/73 |
| Hiersteller | onsemi | Microchip Technology | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
| Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Cut Tape (CT) |
| Voltage - DC Reverse (Vr) (Max) | 20 V | 20 V | 20 V | 20 V |
| Serie | - | - | - | - |
| Package / Case | DO-201AD, Axial | B, Axial | DO-201AD, Axial | DO-201AD, Axial |
| Capacitance @ Vr, F. | 190pF @ 4V, 1MHz | - | 200pF @ 4V, 1MHz | - |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Aktuell - Reverse Leakage @ Vr | 500 µA @ 20 V | 100 µA @ 20 V | 500 µA @ 20 V | 2 mA @ 20 V |
| Basis Produktnummer | 1N5820 | - | 1N5820 | 1N5820 |
| Voltage - Viru (Vf) (Max) @ Wann | 475 mV @ 3 A | 500 mV @ 3 A | 475 mV @ 3 A | 475 mV @ 3 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Operatiounstemperatur - Junction | -65°C ~ 125°C | -65°C ~ 125°C | -55°C ~ 125°C | -65°C ~ 125°C |
| Supplier Device Package | DO-201AD | B, Axial | DO-201AD | DO-201AD |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Eroflueden 1N5820 PDF DataDhusts an onsemi Dokumentatioun fir 1N5820 - onsemi.
1N5820Microchip TechnologyDIODE SCHOTTKY 20V 3A B AXIAL
1N5819WS SLCJ1N5820Taiwan Semiconductor CorporationDIODE SCHOTTKY 20V 3A DO201AD1N5819WTJXND1N5820-E3/73Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 20V 3A DO201AD1N5820 SS32HTWX1N5820Diotec SemiconductorSCHOTTKY DO-201 20V 3A1N5819WT S4CJ1N5820NTE Electronics, IncDIODE SCHOTTKY 20V 3A DO201AD1N5820-E3/54Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 20V 3A DO201AD
1N5820GonsemiDIODE SCHOTTKY 20V 3A AXIAL
1N5820-TDiodes IncorporatedDIODE SCHOTTKY 20V 3A DO201AD1N5819WS S4CJ1N5819WS SL 1AJD
1N5820STMicroelectronicsDIODE SCHOTTKY 20V 3A DO201AD1N5819_AY_10001PANJIT
1N5820Fairchild SemiconductorDIODE SCHOTTKY 20V 3A DO2011N5820RLonsemiDIODE SCHOTTKY 20V 3A AXIAL| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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