1N5408 Tech Spezifikatioune
onsemi - 1N5408 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - 1N5408
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-201AD | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-201AD, Axial |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | 30pF @ 4V, 1MHz | |
| Basis Produktnummer | 1N5408 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi 1N5408.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | 1N5408 | 1N5407-T | 1N5408 | 1N5408 |
| Hiersteller | onsemi | Diodes Incorporated | NTE Electronics, Inc | Yangjie Technology |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
| Serie | - | - | - | - |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -65°C ~ 150°C | -55°C ~ 150°C | -65°C ~ 150°C |
| Package / Case | DO-201AD, Axial | DO-201AD, Axial | DO-201AD, Axial | DO-201AD, Axial |
| Technologie | Standard | Standard | Standard | Standard |
| Capacitance @ Vr, F. | 30pF @ 4V, 1MHz | 25pF @ 4V, 1MHz | 30pF @ 4V, 1MHz | 40pF @ 4V, 1MHz |
| Supplier Device Package | DO-201AD | DO-201AD | DO-201AD | DO-201AD |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bag | Tape & Box (TB) |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | 10 µA @ 800 V | 5 µA @ 1000 V | 5 µA @ 1000 V |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | 800 V | 1000 V | 1000 V |
| Basis Produktnummer | 1N5408 | 1N5407 | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 3 A | 1 V @ 3 A | 1.2 V @ 3 A | 1.2 V @ 3 A |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Eroflueden 1N5408 PDF DataDhusts an onsemi Dokumentatioun fir 1N5408 - onsemi.
1N5407-TDiodes IncorporatedDIODE GEN PURP 800V 3A DO201AD1N5408NTE Electronics, IncDIODE GEN PURP 1KV 3A DO201AD1N5408Yangjie TechnologyDIODE GEN PURP 1KV 3A DO201AD1N5407Diotec SemiconductorDIODE STD DO-201 800V 3A
1N5408-05Taiwan Semiconductor
1N5407Fairchild SemiconductorDIODE GEN PURP 800V 3A AXIAL
1N5407-E3/73Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 800V 3A DO201AD
1N5407SMC Diode SolutionsDIODE GEN PURP 800V 3A DO201AD1N5408SMC Diode SolutionsDIODE GEN PURP 1KV 3A DO201AD1N5408Diotec SemiconductorDIODE STD DO-201 1000V 3A1N5407-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 800V 3A DO201AD
1N5408-E3Electro-Films (EFI) / Vishay
1N5407RLGonsemiDIODE GEN PURP 800V 3A AXIAL1N5408-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 3A DO201AD
1N5408 S3MTAEC Product (Toshiba Electronic Devices and Stora1N5408Fairchild SemiconductorDIODE GEN PURP 1V 3A DO151N5407onsemiDIODE GEN PURP 800V 3A AXIAL1N5408-BDiodes IncorporatedDIODE GEN PURP 1KV 3A DO201AD| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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