1N4446 Tech Spezifikatioune
onsemi - 1N4446 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - 1N4446
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 20 mA | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-35 | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Serie | - | |
| Reverse Recovery Time (trr) | 4 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AH, DO-35, Axial | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | 175°C (Max) | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 25 nA @ 20 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | |
| Capacitance @ Vr, F. | 4pF @ 0V, 1MHz | |
| Basis Produktnummer | 1N4446 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi 1N4446.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | 1N4446 | 1N4448 | 1N4448 | 1N4448 |
| Hiersteller | onsemi | Diotec Semiconductor | Taiwan Semiconductor Corporation | onsemi |
| Package protegéieren | Bulk | Box | Tape & Reel (TR) | Bulk |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | 200mA | 150mA | 200mA |
| Supplier Device Package | DO-35 | DO-35 | DO-35 | DO-35 |
| Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial |
| Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Aktuell - Reverse Leakage @ Vr | 25 nA @ 20 V | 5 µA @ 75 V | 5 µA @ 75 V | 5 µA @ 75 V |
| Operatiounstemperatur - Junction | 175°C (Max) | -50°C ~ 175°C | -65°C ~ 150°C | -55°C ~ 175°C |
| Technologie | Standard | Standard | Standard | Standard |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 20 mA | 1 V @ 100 mA | 1 V @ 100 mA | 1 V @ 100 mA |
| Reverse Recovery Time (trr) | 4 ns | 4 ns | 4 ns | 4 ns |
| Basis Produktnummer | 1N4446 | - | 1N4448 | 1N4448 |
| Serie | - | - | - | - |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 75 V | 100 V | 100 V |
| Capacitance @ Vr, F. | 4pF @ 0V, 1MHz | 4pF @ 0V, 1MHz | 4pF @ 0V, 1MHz | 2pF @ 0V, 1MHz |
Eroflueden 1N4446 PDF DataDhusts an onsemi Dokumentatioun fir 1N4446 - onsemi.
1N4436FTMicrochip TechnologySTD RECTIFIER1N4438FTMicrochip TechnologySTD RECTIFIER1N4448Diotec SemiconductorDIODE GEN PURP 75V 200MA DO351N4404NJS1N4448 T5CJ1N4448Taiwan Semiconductor CorporationDO-35, 100V, 0.15A, SWITCHING DI1N4438FSMicrochip TechnologySTD RECTIFIER1N4448onsemiDIODE GEN PURP 100V 200MA DO351N4448NTE Electronics, IncDIODE GEN PURP 100V 200MA DO351N4448Microchip TechnologyDIODE GEN PURP 75V 200MA DO351N4437FTMicrochip TechnologySINGLE PHASE BRIDGE RECTIFIER1N4437FSMicrochip TechnologySTD RECTIFIER
1N4448Fairchild SemiconductorHIGH CONDUCTANCE FAST DIODE1N4446NTE Electronics, IncDIODE GEN PURP 100V 200MA DO351N4446Fairchild SemiconductorDIODE GEN PURP 100V 200MA DO351N4446TRonsemiDIODE GEN PURP 100V 200MA DO351N4436FSMicrochip TechnologySINGLE PHASE BRIDGE RECTIFIER1N4446Microchip TechnologyDIODE GEN PURP 75V 200MA DO35| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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