1N4004RL Tech Spezifikatioune
onsemi - 1N4004RL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - 1N4004RL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 400 V | |
| Technologie | Standard | |
| Supplier Device Package | Axial | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-204AL, DO-41, Axial |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 400 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N4004 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi 1N4004RL.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | 1N4004RL | 1N4004G | 1N4005 | 1N4004G |
| Hiersteller | onsemi | SMC Diode Solutions | NTE Electronics, Inc | Taiwan Semiconductor Corporation |
| Serie | - | - | - | - |
| Voltage - DC Reverse (Vr) (Max) | 400 V | 400 V | 600 V | 400 V |
| Supplier Device Package | Axial | DO-41 | DO-41 | DO-204AL (DO-41) |
| Package / Case | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial |
| Technologie | Standard | Standard | Standard | Standard |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bag | Tape & Reel (TR) |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 1 A | 1 V @ 1 A | 1.1 V @ 1 A | 1 V @ 1 A |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Capacitance @ Vr, F. | - | 8pF @ 4V, 1MHz | - | 10pF @ 4V, 1MHz |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 400 V | 5 µA @ 400 V | 5 µA @ 600 V | 5 µA @ 400 V |
| Basis Produktnummer | 1N4004 | 1N400 | - | 1N4004 |
Eroflueden 1N4004RL PDF DataDhusts an onsemi Dokumentatioun fir 1N4004RL - onsemi.
1N4004GSMC Diode SolutionsDIODE GEN PURP 400V 1A DO411N4004G M4SHIKUES
1N4004LLITEON1N4004S T/P1N4005NTE Electronics, IncDIODE GEN PURP 600V 1A DO411N4004GTaiwan Semiconductor CorporationDIODE GEN PURP 400V 1A DO204AL1N4004GonsemiDIODE GEN PURP 400V 1A AXIAL1N4004W A4JINGDAO1N4004WRectron USADIODE GEN 1A 400V SOD-123F1N4004S
1N4004LT3G/1N4004TAEC Product (Toshiba Electronic Devices and Stora1N4004GPonsemiDIODE GEN PURP 400V 1A DO411N4004RLGonsemiDIODE GEN PURP 400V 1A AXIAL1N4005Diotec SemiconductorDIODE STD DO-41 600V 1A1N4005onsemiDIODE GEN PURP 600V 1A DO411N4004F M4PLINGSEMIC1N4004GYangzhou Yangjie Electronic Technology Co.,LtdDIODE GEN PURP 400V 1A DO204AL
1N4005Micro Commercial CoDIODE GEN PURP 600V 1A DO41| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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