1N5819 Tech Spezifikatioune
Yangjie Technology - 1N5819 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Yangjie Technology - 1N5819
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Yangjie Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 600 mV @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 40 V | |
| Technologie | Schottky | |
| Supplier Device Package | DO-41 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 10 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AL, DO-41, Axial | |
| Package protegéieren | Tape & Box (TB) | |
| Operatiounstemperatur - Junction | -55°C ~ 125°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 100 µA @ 40 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 110pF @ 4V, 1MHz | |
| Basis Produktnummer | 1N5819 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Yangjie Technology 1N5819.
| Produktiounsattriff | |
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 |
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|---|---|---|---|---|
| Part Number | 1N5819 | 1N5818RLG | 1N5819 | 1N5818A-01 |
| Hiersteller | Yangjie Technology | onsemi | STMicroelectronics | Diodes Incorporated |
| Voltage - Viru (Vf) (Max) @ Wann | 600 mV @ 1 A | 550 mV @ 1 A | 550 mV @ 1 A | - |
| Basis Produktnummer | 1N5819 | 1N5818 | 1N5819 | 1N5818 |
| Operatiounstemperatur - Junction | -55°C ~ 125°C | -65°C ~ 125°C | 150°C (Max) | - |
| Supplier Device Package | DO-41 | Axial | DO-41 | - |
| Voltage - DC Reverse (Vr) (Max) | 40 V | 30 V | 40 V | - |
| Technologie | Schottky | Schottky | Schottky | - |
| Aktuell - Reverse Leakage @ Vr | 100 µA @ 40 V | 1 mA @ 30 V | 500 µA @ 40 V | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | - |
| Package / Case | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | - |
| Reverse Recovery Time (trr) | 10 ns | - | - | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | - |
| Serie | - | - | - | - |
| Capacitance @ Vr, F. | 110pF @ 4V, 1MHz | - | - | - |
| Package protegéieren | Tape & Box (TB) | Tape & Reel (TR) | Cut Tape (CT) | Bulk |
Eroflueden 1N5819 PDF DataDhusts an Yangjie Technology Dokumentatioun fir 1N5819 - Yangjie Technology.
1N5818MGS1N5818WJINGDAO1N5819 T/P1N5818RLGonsemiDIODE SCHOTTKY 30V 1A AXIAL1N5819STMicroelectronicsDIODE SCHOTTKY 40V 1A DO411N5818A-01Diodes IncorporatedDIODE SCHOTTKY DO411N5819 SS14 SMA TOSTOS1N5819NTE Electronics, IncDIODE SCHOTTKY 40V 1A DO411N5819 SS14 SMAMIC1N5819 S4CJ1N5819 SS141N5819Microchip TechnologyDIODE SCHOTTKY 45V 1A DO41
1N5819Diotec SemiconductorDIODE SCHOT 40V 1A DO15/DO204AC1N5818GonsemiDIODE SCHOTTKY 30V 1A AXIAL1N5819(SS14)TDD
1N5819 TE12LTAEC Product (Toshiba Electronic Devices and Stora
1N5819Taiwan Semiconductor CorporationDIODE SCHOTTKY 40V 1A DO204AL1N5819onsemiDIODE SCHOTTKY 40V 1A DO41| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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