SIB488DK-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIB488DK-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIB488DK-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® SC-75-6 | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 20mOhm @ 6.3A, 4.5V | |
Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) | |
Package / Case | PowerPAK® SC-75-6 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 725 pF @ 6 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 8 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 12 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Tc) | |
Basis Produktnummer | SIB488 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIB488DK-T1-GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SIB488DK-T1-GE3 | SIB422EDK-T1-GE3 | SIB457EDK-T1-GE3 | SIB417AEDK-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Vgs (Max) | ±8V | ±8V | ±8V | ±5V |
Supplier Device Package | PowerPAK® SC-75-6 | PowerPAK® SC-75-6 | PowerPAK® SC-75-6 | PowerPAK® SC-75-6 |
Basis Produktnummer | SIB488 | SIB422 | SIB457 | SIB417 |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.5V, 4.5V | 4.5V | 1.2V, 4.5V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 20mOhm @ 6.3A, 4.5V | 30mOhm @ 5A, 4.5V | 35mOhm @ 4.8A, 4.5V | 32mOhm @ 3A, 4.5V |
FET Typ | N-Channel | N-Channel | P-Channel | P-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) | 2.5W (Ta), 13W (Tc) | 2.4W (Ta), 13W (Tc) | 2.4W (Ta), 13W (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Entworf fir Source Voltage (Vdss) | 12 V | 20 V | 20 V | 8 V |
Input Capacitance (Ciss) (Max) @ Vds | 725 pF @ 6 V | - | - | 878 pF @ 4 V |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 8 V | 18 nC @ 8 V | 44 nC @ 8 V | 18.5 nC @ 5 V |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | PowerPAK® SC-75-6 | PowerPAK® SC-75-6 | PowerPAK® SC-75-6 | PowerPAK® SC-75-6 |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Tc) | 9A (Tc) | 9A (Tc) | 9A (Tc) |
Eroflueden SIB488DK-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIB488DK-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.