SI8425DB-T1-E1 Tech Spezifikatioune
Vishay Siliconix - SI8425DB-T1-E1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI8425DB-T1-E1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 900mV @ 250µA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 4-WLCSP (1.6x1.6) | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 23mOhm @ 2A, 4.5V | |
Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) | |
Package / Case | 4-UFBGA, WLCSP | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.9A (Ta) | |
Basis Produktnummer | SI8425 |
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Produktiounsattriff | ||||
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Part Number | SI8425DB-T1-E1 | SI8429DB-T1-E1 | SI8424DB-T1-E1 | SI8424CDB-T1-E1 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
FET Feature | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.9A (Ta) | 11.7A (Tc) | 12.2A (Tc) | 6.3A (Ta) |
Vgs (Max) | ±10V | ±5V | ±5V | ±5V |
Rds On (Max) @ Id, Vgs | 23mOhm @ 2A, 4.5V | 35mOhm @ 1A, 4.5V | 31mOhm @ 1A, 4.5V | 20mOhm @ 2A, 4.5V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | 4-UFBGA, WLCSP | 4-XFBGA, CSPBGA | 4-XFBGA, CSPBGA | 4-UFBGA, WLCSP |
Vgs (th) (Max) @ Id | 900mV @ 250µA | 800mV @ 250µA | 1V @ 250µA | 800mV @ 250µA |
FET Typ | P-Channel | P-Channel | N-Channel | N-Channel |
Supplier Device Package | 4-WLCSP (1.6x1.6) | 4-Microfoot | 4-Microfoot | 4-Microfoot |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 20 V | 8 V | 8 V | 8 V |
Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) | 2.77W (Ta), 6.25W (Tc) | 2.78W (Ta), 6.25W (Tc) | 1.1W (Ta), 2.7W (Tc) |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 10 V | 1640 pF @ 4 V | 1950 pF @ 4 V | 2340 pF @ 4 V |
Basis Produktnummer | SI8425 | SI8429 | SI8424 | SI8424 |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | 26 nC @ 5 V | 33 nC @ 5 V | 40 nC @ 4.5 V |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.2V, 4.5V | 1.2V, 4.5V | 1.2V, 4.5V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden SI8425DB-T1-E1 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI8425DB-T1-E1 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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