SI8424DB-T1-E1 Tech Spezifikatioune
Vishay Siliconix - SI8424DB-T1-E1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI8424DB-T1-E1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±5V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 4-Microfoot | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 1A, 4.5V | |
| Power Dissipation (Max) | 2.78W (Ta), 6.25W (Tc) | |
| Package / Case | 4-XFBGA, CSPBGA | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 4 V | |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 8 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12.2A (Tc) | |
| Basis Produktnummer | SI8424 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI8424DB-T1-E1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SI8424DB-T1-E1 | SI8424CDB-T1-E1 | SI8425DB-T1-E1 | SI8429DB-T1-E1 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Fuert Volt (Max Rds On, Min Rds On) | 1.2V, 4.5V | 1.2V, 4.5V | 1.8V, 4.5V | 1.2V, 4.5V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Power Dissipation (Max) | 2.78W (Ta), 6.25W (Tc) | 1.1W (Ta), 2.7W (Tc) | 1.1W (Ta), 2.7W (Tc) | 2.77W (Ta), 6.25W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 4 V | 2340 pF @ 4 V | 2800 pF @ 10 V | 1640 pF @ 4 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 800mV @ 250µA | 900mV @ 250µA | 800mV @ 250µA |
| Entworf fir Source Voltage (Vdss) | 8 V | 8 V | 20 V | 8 V |
| FET Typ | N-Channel | N-Channel | P-Channel | P-Channel |
| Basis Produktnummer | SI8424 | SI8424 | SI8425 | SI8429 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 5 V | 40 nC @ 4.5 V | 110 nC @ 10 V | 26 nC @ 5 V |
| Supplier Device Package | 4-Microfoot | 4-Microfoot | 4-WLCSP (1.6x1.6) | 4-Microfoot |
| Vgs (Max) | ±5V | ±5V | ±10V | ±5V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12.2A (Tc) | 6.3A (Ta) | 5.9A (Ta) | 11.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 1A, 4.5V | 20mOhm @ 2A, 4.5V | 23mOhm @ 2A, 4.5V | 35mOhm @ 1A, 4.5V |
| Package / Case | 4-XFBGA, CSPBGA | 4-UFBGA, WLCSP | 4-UFBGA, WLCSP | 4-XFBGA, CSPBGA |
| FET Feature | - | - | - | - |
Eroflueden SI8424DB-T1-E1 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI8424DB-T1-E1 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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