SI4423DY-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI4423DY-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI4423DY-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 900mV @ 600µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 14A, 4.5V | |
| Power Dissipation (Max) | 1.5W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Ta) | |
| Basis Produktnummer | SI4423 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | |
| ECCN | EAR99 |
| HTSUS |
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| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SI4423DY-T1-GE3 | SI4425BDY-T1-E3 | SI4421DY-T1-E3 | SI4425BDY-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Power Dissipation (Max) | 1.5W (Ta) | 1.5W (Ta) | 1.5W (Ta) | 1.5W (Ta) |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 20 V | 30 V |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 4.5V, 10V | 1.8V, 4.5V | 4.5V, 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 5 V | 100 nC @ 10 V | 125 nC @ 4.5 V | 100 nC @ 10 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (th) (Max) @ Id | 900mV @ 600µA | 3V @ 250µA | 800mV @ 850µA | 3V @ 250µA |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Ta) | 8.8A (Ta) | 10A (Ta) | 8.8A (Ta) |
| Vgs (Max) | ±8V | ±20V | ±8V | ±20V |
| FET Feature | - | - | - | - |
| Basis Produktnummer | SI4423 | SI4425 | SI4421 | SI4425 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 14A, 4.5V | 12mOhm @ 11.4A, 10V | 8.75mOhm @ 14A, 4.5V | 12mOhm @ 11.4A, 10V |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Eroflueden SI4423DY-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI4423DY-T1-GE3 - Vishay Siliconix.
SI4423DY-T1-E3 MOSVISHAT
SI4423DY-T1Electro-Films (EFI) / VishaySI4425BElectro-Films (EFI) / Vishay
SI4425BDYSilicon Power
SI4421-A1-FTRSilicon LabsIC RF TXRX ISM<1GHZ 16TSSOPSI4425BDY-T1-E3Vishay SiliconixMOSFET P-CH 30V 8.8A 8SOSI4425BDY-E3Electro-Films (EFI) / VishaySI4420DYTRPBF.IRSI4425SISI4421DY-T1-E3Vishay SiliconixMOSFET P-CH 20V 10A 8SOSI4425DDYElectro-Films (EFI) / VishaySI4421-A1-FTSiliconSI4425BDY-T1-GE3Vishay SiliconixMOSFET P-CH 30V 8.8A 8SOSI4421-A0-FTRSilicon LabsIC RF TXRX ISM<1GHZ 16TSSOPSI4425BDY-T1-E3 MOSElectro-Films (EFI) / VishaySI4425DDY-T1Electro-Films (EFI) / VishaySI4421DYElectro-Films (EFI) / VishaySI4423DY-T1-E3Vishay SiliconixMOSFET P-CH 20V 10A 8SO| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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