SI3993CDV-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI3993CDV-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI3993CDV-T1-GE3
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 6-TSOP | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 111mOhm @ 2.5A, 10V | |
Power - Max | 1.4W | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.9A | |
Konfiguratioun | 2 P-Channel (Dual) | |
Basis Produktnummer | SI3993 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI3993CDV-T1-GE3.
Produktiounsattriff | ||||
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Part Number | SI3993CDV-T1-GE3 | SI3983DV-T1-GE3 | SI3981DV-T1-GE3 | SI3981DV-T1-E3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
Basis Produktnummer | SI3993 | SI3983 | SI3981 | SI3981 |
Supplier Device Package | 6-TSOP | 6-TSOP | 6-TSOP | 6-TSOP |
Power - Max | 1.4W | 830mW | 800mW | 800mW |
Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 15V | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 30V | 20V | 20V | 20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.9A | 2.1A | 1.6A | 1.6A |
FET Feature | - | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V | 7.5nC @ 4.5V | 5nC @ 4.5V | 5nC @ 4.5V |
Rds On (Max) @ Id, Vgs | 111mOhm @ 2.5A, 10V | 110mOhm @ 2.5A, 4.5V | 185mOhm @ 1.9A, 4.5V | 185mOhm @ 1.9A, 4.5V |
Konfiguratioun | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | 1.1V @ 250µA | 1.1V @ 250µA | 1.1V @ 250µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden SI3993CDV-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI3993CDV-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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