SI2311DS-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI2311DS-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI2311DS-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 800mV @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.5A, 4.5V | |
| Power Dissipation (Max) | 710mW (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 4 V | |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 8 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Ta) | |
| Basis Produktnummer | SI2311 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI2311DS-T1-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SI2311DS-T1-GE3 | SI2312BDS-T1-GE3 | SI2312-TP | SI2312BDS-T1-E3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Micro Commercial Co | Vishay Siliconix |
| Vgs (Max) | ±8V | ±8V | ±8V | ±8V |
| Vgs (th) (Max) @ Id | 800mV @ 250µA | 850mV @ 250µA | 1V @ 250µA | 850mV @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| FET Feature | - | - | - | - |
| Serie | TrenchFET® | TrenchFET® | - | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 8 V | 20 V | 20 V | 20 V |
| FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Ta) | 3.9A (Ta) | 5A (Ta) | 3.9A (Ta) |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.8V, 4.5V | 4.5V | 1.8V, 4.5V |
| Basis Produktnummer | SI2311 | SI2312 | SI2312 | SI2312 |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V | 12 nC @ 4.5 V | - | 12 nC @ 4.5 V |
| Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23 | SOT-23-3 (TO-236) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.5A, 4.5V | 31mOhm @ 5A, 4.5V | 41mOhm @ 4.3A, 1.8V | 31mOhm @ 5A, 4.5V |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 4 V | - | 865 pF @ 10 V | - |
| Power Dissipation (Max) | 710mW (Ta) | 750mW (Ta) | 350mW (Ta) | 750mW (Ta) |
Eroflueden SI2311DS-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI2311DS-T1-GE3 - Vishay Siliconix.
SI2312BDS-T1-E3 MOSElectro-Films (EFI) / Vishay
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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