IRFP21N60L Tech Spezifikatioune
Vishay Siliconix - IRFP21N60L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFP21N60L
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247AC | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 13A, 10V | |
| Power Dissipation (Max) | 330W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Tc) | |
| Basis Produktnummer | IRFP21 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFP21N60L.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | IRFP21N60L | IRFP22N50A | IRFP150PBF | IRFP21N60LPBF |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | 120 nC @ 10 V | 140 nC @ 10 V | 150 nC @ 10 V |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Basis Produktnummer | IRFP21 | IRFP22 | IRFP150 | IRFP21 |
| Power Dissipation (Max) | 330W (Tc) | 277W (Tc) | 230W (Tc) | 330W (Tc) |
| Serie | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Tc) | 22A (Tc) | 41A (Tc) | 21A (Tc) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Vgs (Max) | ±30V | ±30V | ±20V | ±30V |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 13A, 10V | 230mOhm @ 13A, 10V | 55mOhm @ 25A, 10V | 320mOhm @ 13A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V | 3450 pF @ 25 V | 2800 pF @ 25 V | 4000 pF @ 25 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 600 V | 500 V | 100 V | 600 V |
| Supplier Device Package | TO-247AC | TO-247AC | TO-247AC | TO-247AC |
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IRFP17N50LPBF MOSElectro-Films (EFI) / Vishay
IRFP150VIRIRFP21N60LPBF MOSIRIRFP15N60LPBFVishay SiliconixMOSFET N-CH 600V 15A TO247-3IRFP17N50LSIRIRFP22N60KVishay SiliconixMOSFET N-CH 600V 22A TO247-3IRFP17N50LPBFVishay SiliconixMOSFET N-CH 500V 16A TO247-3IRFP240Vishay SiliconixMOSFET N-CH 200V 20A TO247-3IRFP23N50LPBFVishay SiliconixMOSFET N-CH 500V 23A TO247-3
IRFP150P221PBFCypress Semiconductor (Infineon Technologies)IRFP17N50LVishay SiliconixMOSFET N-CH 500V 16A TO247-3IRFP15N60LIRIRFP23N50LVishay SiliconixMOSFET N-CH 500V 23A TO247-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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