IRFIB8N50K Tech Spezifikatioune
Vishay Siliconix - IRFIB8N50K technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFIB8N50K
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 350mOhm @ 4A, 10V | |
Power Dissipation (Max) | 45W (Tc) | |
Package / Case | TO-220-3 Full Pack, Isolated Tab | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.7A (Tc) | |
Basis Produktnummer | IRFIB8 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFIB8N50K.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFIB8N50K | IRFIB5N65APBF | IRFIBC20G | IRFIB7N50A |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Package / Case | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
Power Dissipation (Max) | 45W (Tc) | 60W (Tc) | 30W (Tc) | 60W (Tc) |
Vgs (Max) | ±30V | ±30V | ±20V | ±30V |
Rds On (Max) @ Id, Vgs | 350mOhm @ 4A, 10V | 930mOhm @ 3.1A, 10V | 4.4Ohm @ 1A, 10V | 520mOhm @ 4A, 10V |
Package protegéieren | Tube | Tube | Tube | Tube |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Basis Produktnummer | IRFIB8 | IRFIB5 | IRFIBC20 | IRFIB7 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Entworf fir Source Voltage (Vdss) | 500 V | 650 V | 600 V | 500 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V | 48 nC @ 10 V | 18 nC @ 10 V | 52 nC @ 10 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.7A (Tc) | 5.1A (Tc) | 1.7A (Tc) | 6.6A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 25 V | 1417 pF @ 25 V | 350 pF @ 25 V | 1423 pF @ 25 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | - | - | - | - |
Eroflueden IRFIB8N50K PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFIB8N50K - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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