VF30100C-E3/4W Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - VF30100C-E3/4W technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - VF30100C-E3/4W
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 800 mV @ 15 A | |
Voltage - DC Reverse (Vr) (Max) | 100 V | |
Technologie | Schottky | |
Supplier Device Package | ITO-220AB | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | TMBS® | |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -40°C ~ 150°C | |
Mounting Type | Through Hole | |
Diode Configuration | 1 Pair Common Cathode | |
Aktuell - Reverse Leakage @ Vr | 500 µA @ 100 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 15A | |
Basis Produktnummer | VF30100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division VF30100C-E3/4W.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | VF30100C-E3/4W | 16CTU04 | VF30150C-E3/4W | VF30150C-M3/4W |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 15A | 8A | 15A | 15A |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Technologie | Schottky | Standard | Schottky | Schottky |
Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
Basis Produktnummer | VF30100 | 16CTU04 | VF30150 | VF30150 |
Aktuell - Reverse Leakage @ Vr | 500 µA @ 100 V | 10 µA @ 400 V | 200 µA @ 150 V | 200 µA @ 150 V |
Voltage - Viru (Vf) (Max) @ Wann | 800 mV @ 15 A | 1.3 V @ 8 A | 1.36 V @ 15 A | 1.36 V @ 15 A |
Supplier Device Package | ITO-220AB | TO-220-3 | ITO-220AB | ITO-220AB |
Package protegéieren | Tube | Tube | Tube | Tube |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Package / Case | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
Operatiounstemperatur - Junction | -40°C ~ 150°C | -65°C ~ 175°C | -55°C ~ 150°C | -55°C ~ 150°C |
Serie | TMBS® | - | TMBS® | TMBS® |
Voltage - DC Reverse (Vr) (Max) | 100 V | 400 V | 150 V | 150 V |
Eroflueden VF30100C-E3/4W PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir VF30100C-E3/4W - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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