UG10BCT-E3/45 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - UG10BCT-E3/45 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - UG10BCT-E3/45
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 5 A | |
Voltage - DC Reverse (Vr) (Max) | 100 V | |
Technologie | Standard | |
Supplier Device Package | TO-220-3 | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Reverse Recovery Time (trr) | 25 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | TO-220-3 | |
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -40°C ~ 150°C | |
Mounting Type | Through Hole | |
Diode Configuration | 1 Pair Common Cathode | |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 5A | |
Basis Produktnummer | UG10 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | UG10BCT-E3/45 | UG10DCT-E3/45 | UG10FCT-E3/45 | UG10CCT-E3/45 |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Voltage - DC Reverse (Vr) (Max) | 100 V | 200 V | 300 V | 150 V |
Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 5A | 5A | 5A | 5A |
Technologie | Standard | Standard | Standard | Standard |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Basis Produktnummer | UG10 | UG10 | UG10 | UG10 |
Operatiounstemperatur - Junction | -40°C ~ 150°C | -40°C ~ 150°C | -40°C ~ 150°C | -40°C ~ 150°C |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 5 A | 1.1 V @ 5 A | 1.3 V @ 5 A | 1.1 V @ 5 A |
Package protegéieren | Tube | Tube | Tube | Tube |
Serie | - | - | - | - |
Reverse Recovery Time (trr) | 25 ns | 25 ns | 50 ns | 25 ns |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | 10 µA @ 200 V | 10 µA @ 300 V | 10 µA @ 150 V |
Eroflueden UG10BCT-E3/45 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir UG10BCT-E3/45 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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