BZD27C51P-E3-08 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - BZD27C51P-E3-08 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - BZD27C51P-E3-08
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Zener (nom) (Vz) | 51 V | |
Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 200 mA | |
Toleranz | - | |
Supplier Device Package | DO-219AB (SMF) | |
Serie | BZD27C | |
Power - Max | 800 mW |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | DO-219AB | |
Package protegéieren | Tape & Reel (TR) | |
Operatioun Temperatur | -65°C ~ 175°C | |
Mounting Type | Surface Mount | |
Impedanz (Max) (Zzt) | 60 Ohms | |
Aktuell - Reverse Leakage @ Vr | 1 µA @ 39 V | |
Basis Produktnummer | BZD27C51 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division BZD27C51P-E3-08.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BZD27C51P-E3-08 | BZD27C4V3P | BZD27C56P | BZD27C47P-E3-08 |
Hiersteller | Vishay General Semiconductor - Diodes Division | Rectron USA | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division |
Impedanz (Max) (Zzt) | 60 Ohms | 4 Ohms | 60 Ohms | 45 Ohms |
Toleranz | - | ±6% | ±7.14% | - |
Package protegéieren | Tape & Reel (TR) | - | Tape & Reel (TR) | Tape & Reel (TR) |
Power - Max | 800 mW | 800 mW | 1 W | 800 mW |
Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 200 mA | - | 1.2 V @ 200 mA | 1.2 V @ 200 mA |
Package / Case | DO-219AB | SOD-123F | DO-219AB | DO-219AB |
Supplier Device Package | DO-219AB (SMF) | SOD-123FL | Sub SMA | DO-219AB (SMF) |
Serie | BZD27C | - | - | BZD27C |
Basis Produktnummer | BZD27C51 | - | BZD27 | BZD27C47 |
Operatioun Temperatur | -65°C ~ 175°C | - | -55°C ~ 175°C (TJ) | -65°C ~ 175°C |
Voltage - Zener (nom) (Vz) | 51 V | 4.3 V | 56 V | 47 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Reverse Leakage @ Vr | 1 µA @ 39 V | 25 µA @ 1 V | 1 µA @ 43 V | 1 µA @ 36 V |
Eroflueden BZD27C51P-E3-08 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir BZD27C51P-E3-08 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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