HERAF1006G Tech Spezifikatioune
Taiwan Semiconductor Corporation - HERAF1006G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - HERAF1006G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 10 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | Standard | |
| Supplier Device Package | ITO-220AC | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 80 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-2 Full Pack | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 10A | |
| Capacitance @ Vr, F. | 60pF @ 4V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation HERAF1006G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | HERAF1006G | HERA808G | HERAF1005G | HERAF1605G |
| Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
| Capacitance @ Vr, F. | 60pF @ 4V, 1MHz | 55pF @ 4V, 1MHz | 80pF @ 4V, 1MHz | 150pF @ 4V, 1MHz |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 1000 V | 400 V | 400 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 10A | 8A | 10A | 16A |
| Serie | - | - | - | - |
| Reverse Recovery Time (trr) | 80 ns | 80 ns | 50 ns | 50 ns |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | 10 µA @ 1000 V | 10 µA @ 400 V | 10 µA @ 400 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 10 A | 1.7 V @ 8 A | 1.3 V @ 10 A | 1.3 V @ 16 A |
| Supplier Device Package | ITO-220AC | TO-220AC | ITO-220AC | ITO-220AC |
| Technologie | Standard | Standard | Standard | Standard |
| Package / Case | TO-220-2 Full Pack | TO-220-2 | TO-220-2 Full Pack | TO-220-2 Full Pack |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
HERAF1608GTaiwan SemiconductorHERAF803GTaiwan SemiconductorHERA808GTaiwan Semiconductor CorporationDIODE GEN PURP 8A TO220ACHER803BLHERAF1005GTaiwan Semiconductor CorporationDIODE GEN PURP 400V 10A ITO220ACHER608SUNMATEHERA1607GTaiwan SemiconductorHERA1603GTaiwan SemiconductorHERAF1605GTaiwan Semiconductor CorporationDIODE GEN PURP 400V 16A ITO220ACHER608GYangjie TechnologyR-6 1000V 6.0A Diodes RectifieHERAF804GTaiwan Semiconductor CorporationDIODE GEN PURP 300V 8A ITO220AC
HERCROM200 CTexas InstrumentsHERAF808GTaiwan Semiconductor CorporationDIODE GEN PURP 1KV 8A ITO220ACHERAF1008GTaiwan Semiconductor CorporationDIODE GEN PURP 1KV 10A ITO220ACHERAF1601GTaiwan SemiconductorHERA803GTaiwan Semiconductor CorporationDIODE GEN PURP 200V 8A TO220ACHERAF806GTaiwan Semiconductor CorporationDIODE GEN PURP 600V 8A ITO220ACHER607SUNMATE| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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