1N1189R Tech Spezifikatioune
Solid State Inc. - 1N1189R technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Solid State Inc. - 1N1189R
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Solid State Inc. | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.19 V @ 90 A | |
| Voltage - DC Reverse (Vr) (Max) | 500 V | |
| Technologie | Standard, Reverse Polarity | |
| Supplier Device Package | DO-5 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-203AB, DO-5, Stud | |
| Package protegéieren | Box | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 500 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 40A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Solid State Inc. 1N1189R.
| Produktiounsattriff |  |
|
 |
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|---|---|---|---|---|
| Part Number | 1N1189R | 1N1190A | 1N1189A | 1N1189R |
| Hiersteller | Solid State Inc. | Solid State Inc. | Microchip Technology | GeneSiC Semiconductor |
| Mounting Type | Stud Mount | Stud Mount | Stud Mount | Chassis, Stud Mount |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 40A | 40A | 40A | 35A |
| Capacitance @ Vr, F. | - | - | - | - |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 190°C |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 500 V | 10 µA @ 600 V | 10 µA @ 500 V | 10 µA @ 50 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.19 V @ 90 A | 1.19 V @ 90 A | 1.19 V @ 90 A | 1.2 V @ 35 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Technologie | Standard, Reverse Polarity | Standard | Standard | Standard, Reverse Polarity |
| Package protegéieren | Box | Box | Bulk | Bulk |
| Voltage - DC Reverse (Vr) (Max) | 500 V | 600 V | 500 V | 600 V |
| Serie | - | - | - | - |
| Package / Case | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud | DO-203AB, DO-5, Stud |
| Supplier Device Package | DO-5 | DO-5 | DO-203AB (DO-5) | DO-5 |
Eroflueden 1N1189R PDF DataDhusts an Solid State Inc. Dokumentatioun fir 1N1189R - Solid State Inc..
1N1190ASolid State Inc.DIODE GEN PURP 600V 40A DO51N1189AMicrochip TechnologySTANDARD RECTIFIER1N1189RGeneSiC SemiconductorDIODE GEN PURP REV 600V 35A DO51N1189ARMicrochip TechnologySTANDARD RECTIFIER1N1190ARGeneSiC SemiconductorDIODE GEN PURP REV 600V 40A DO51N1190ARMicrochip TechnologySTANDARD RECTIFIER1N1189Solid State Inc.DIODE GEN PURP 500V 40A DO51N1190GeneSiC SemiconductorDIODE GEN PURP 600V 35A DO51N1190AMicrochip TechnologySTANDARD RECTIFIER1N1189GeneSiC SemiconductorDIODE GEN PURP 600V 35A DO51N1190Solid State Inc.DIODE GEN PURP 600V 40A DO51N1189ASolid State Inc.DIODE GEN PURP 500V 40A DO51N1190AGeneSiC SemiconductorDIODE GEN PURP 600V 40A DO51N1190Microchip TechnologySTANDARD RECTIFIER1N1189RASolid State Inc.DIODE GEN PURP REV 500V 40A DO51N1189RMicrochip TechnologySTANDARD RECTIFIER1N1189Microchip TechnologySTANDARD RECTIFIER
1N1189CIRIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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