GL4100 Tech Spezifikatioune
Sharp Microelectronics - GL4100 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Sharp Microelectronics - GL4100
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Sharp Microelectronics | |
| Wellenlängt | 950nm | |
| Voltage - Viru (Vf) (Typ) | 1.2V | |
| Viewing Angle | 180° | |
| Typ | Infrared (IR) | |
| Serie | - | |
| Radiant Intensitéit (Ie) Min @ Wann | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | Radial | |
| Package protegéieren | - | |
| Orientéierung | Side View | |
| Operatioun Temperatur | -25°C ~ 85°C (TA) | |
| Mounting Type | Through Hole | |
| Aktuell - DC Forward (Wann) (Max) | 50mA |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | RoHS net konform |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | Not Applicable |
| Erreecht Status | |
| ECCN | EAR99 |
| HTSUS | 8541.41.0000 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Sharp Microelectronics GL4100.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | GL4100 | GL41A/25 | GL41A-E3/96 | GL41J-E3/97 |
| Hiersteller | Sharp Microelectronics | Electro-Films (EFI) / Vishay | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Package / Case | Radial | - | DO-213AB, MELF (Glass) | DO-213AB, MELF (Glass) |
| Operatioun Temperatur | -25°C ~ 85°C (TA) | - | - | - |
| Orientéierung | Side View | - | - | - |
| Mounting Type | Through Hole | - | Surface Mount | Surface Mount |
| Aktuell - DC Forward (Wann) (Max) | 50mA | - | - | - |
| Viewing Angle | 180° | - | - | - |
| Package protegéieren | - | - | Tape & Reel (TR) | Tape & Reel (TR) |
| Serie | - | - | SUPERECTIFIER® | SUPERECTIFIER® |
| Radiant Intensitéit (Ie) Min @ Wann | - | - | - | - |
| Wellenlängt | 950nm | - | - | - |
| Voltage - Viru (Vf) (Typ) | 1.2V | - | - | - |
| Typ | Infrared (IR) | - | - | - |
Eroflueden GL4100 PDF DataDhusts an Sharp Microelectronics Dokumentatioun fir GL4100 - Sharp Microelectronics.
GL41A/25Electro-Films (EFI) / VishayGL41A-E3/96Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 50V 1A DO213ABGL41J-E3/97Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 600V 1A DO213ABGL41B-E3/96Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 100V 1A DO213ABGL41B-E3/76Electro-Films (EFI) / VishayGL41GHE3/97Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 1A DO213ABGL41G-E3/96Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 1A DO213ABGL41A-E3/76Electro-Films (EFI) / VishayGL41J-E3/96Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 600V 1A DO213AB
GL41B-3ROCGL40N-ST23RGLEAMGL41D/25Electro-Films (EFI) / VishayGL41D/46Electro-Films (EFI) / VishayGL41G-2Electro-Films (EFI) / VishayGL41D-6056Electro-Films (EFI) / VishayGL41G-TRGSGL41G/25Electro-Films (EFI) / VishayGL41G-E3/76Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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