STW75N60M6-4 Tech Spezifikatioune
STMicroelectronics - STW75N60M6-4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STW75N60M6-4
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.75V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-4 | |
Serie | MDmesh™ M6 | |
Rds On (Max) @ Id, Vgs | 36mOhm @ 36A, 10V | |
Power Dissipation (Max) | 446W (Tc) | |
Package / Case | TO-247-4 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 72A (Tc) | |
Basis Produktnummer | STW75 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STW75N60M6-4.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STW75N60M6-4 | STW70N65DM6 | STW75NF20 | STW75NF30 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Package / Case | TO-247-4 | TO-247-3 | TO-247-3 | TO-247-3 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (Max) | ±25V | ±25V | ±20V | ±20V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -50°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V | 125 nC @ 10 V | 84 nC @ 10 V | 164 nC @ 10 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 100 V | 4900 pF @ 100 V | 3260 pF @ 25 V | 5930 pF @ 25 V |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 600 V | 650 V | 200 V | 300 V |
Serie | MDmesh™ M6 | MDmesh™ DM6 | STripFET™ | STripFET™ |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package protegéieren | Tube | Tube | Tube | Tube |
Supplier Device Package | TO-247-4 | TO-247-3 | TO-247-3 | TO-247-3 |
Rds On (Max) @ Id, Vgs | 36mOhm @ 36A, 10V | 40mOhm @ 34A, 10V | 34mOhm @ 37A, 10V | 45mOhm @ 30A, 10V |
Vgs (th) (Max) @ Id | 4.75V @ 250µA | 4.75V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 446W (Tc) | 450W (Tc) | 190W (Tc) | 320W (Tc) |
Basis Produktnummer | STW75 | STW70 | STW75 | STW75N |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 72A (Tc) | 68A (Tc) | 75A (Tc) | 60A (Tc) |
Eroflueden STW75N60M6-4 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STW75N60M6-4 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
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Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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