STW70N60DM6-4 Tech Spezifikatioune
STMicroelectronics - STW70N60DM6-4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STW70N60DM6-4
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.75V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-4 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 42mOhm @ 31A, 10V | |
Power Dissipation (Max) | 390W (Tc) | |
Package / Case | TO-247-4 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 62A (Tc) | |
Basis Produktnummer | STW70 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STW70N60DM6-4.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STW70N60DM6-4 | STW72N60DM2AG | STW70N10F4 | STW70N60DM6 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Rds On (Max) @ Id, Vgs | 42mOhm @ 31A, 10V | 42mOhm @ 33A, 10V | 19.5mOhm @ 30A, 10V | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | - |
Basis Produktnummer | STW70 | STW72 | STW70N | STW70 |
Power Dissipation (Max) | 390W (Tc) | 446W (Tc) | 150W (Tc) | - |
Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 100 V | 5508 pF @ 100 V | 5800 pF @ 25 V | - |
Supplier Device Package | TO-247-4 | TO-247-3 | TO-247-3 | TO-247-3 |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 100 V | 600 V |
Serie | - | Automotive, AEC-Q101, MDmesh™ DM2 | DeepGATE™, STripFET™ | MDmesh™ DM6 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Tube | Tube | Tube |
Vgs (Max) | ±25V | ±25V | ±20V | ±25V |
FET Feature | - | - | - | - |
Package / Case | TO-247-4 | TO-247-3 | TO-247-3 | TO-247-3 |
Vgs (th) (Max) @ Id | 4.75V @ 250µA | 5V @ 250µA | 4V @ 250µA | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 62A (Tc) | 66A (Tc) | 65A (Tc) | 62A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 10 V | 121 nC @ 10 V | 85 nC @ 10 V | - |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Eroflueden STW70N60DM6-4 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STW70N60DM6-4 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.