STW63N65DM2 Tech Spezifikatioune
STMicroelectronics - STW63N65DM2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STW63N65DM2
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-3 | |
Serie | MDmesh™ | |
Rds On (Max) @ Id, Vgs | 50mOhm @ 30A, 10V | |
Power Dissipation (Max) | 446W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | |
Basis Produktnummer | STW63 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STW63N65DM2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STW63N65DM2 | STW65N65DM2AG | STW65N60DM6 | STW62N65M5 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | 120 nC @ 10 V | - | 142 nC @ 10 V |
Power Dissipation (Max) | 446W (Tc) | 446W (Tc) | - | 330W (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | 150°C (TJ) |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | - | 5V @ 250µA |
Entworf fir Source Voltage (Vdss) | 650 V | 650 V | 600 V | 650 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Rds On (Max) @ Id, Vgs | 50mOhm @ 30A, 10V | 50mOhm @ 30A, 10V | - | 49mOhm @ 23A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | MDmesh™ | Automotive, AEC-Q101, MDmesh™ DM2 | MDmesh™ DM6 | Automotive, AEC-Q101, MDmesh™ V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Vgs (Max) | ±25V | ±25V | ±25V | ±25V |
Basis Produktnummer | STW63 | STW65 | STW65 | STW62 |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | 60A (Tc) | 38A (Tc) | 46A (Tc) |
Package protegéieren | Tube | Tube | Tube | Tube |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 100 V | 5500 pF @ 100 V | - | 6420 pF @ 100 V |
Eroflueden STW63N65DM2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STW63N65DM2 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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