STW58N60DM2AG Tech Spezifikatioune
STMicroelectronics - STW58N60DM2AG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STW58N60DM2AG
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-3 | |
Serie | Automotive, AEC-Q101, MDmesh™ DM2 | |
Rds On (Max) @ Id, Vgs | 60mOhm @ 25A, 10V | |
Power Dissipation (Max) | 360W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | |
Basis Produktnummer | STW58 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STW58N60DM2AG.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STW58N60DM2AG | STW60N65M5 | STW56N65DM2 | STW56N65M2 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Package protegéieren | Tube | Tube | Tube | Tube |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Feature | - | - | - | - |
Basis Produktnummer | STW58 | STW60N | STW56 | STW56 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±25V | ±25V | ±25V | ±25V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Serie | Automotive, AEC-Q101, MDmesh™ DM2 | MDmesh™ V | MDmesh™ DM2 | MDmesh™ M2 |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Power Dissipation (Max) | 360W (Tc) | 255W (Tc) | 360W (Tc) | 358W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 46A (Tc) | 48A (Tc) | 49A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | 139 nC @ 10 V | 88 nC @ 10 V | 93 nC @ 10 V |
Entworf fir Source Voltage (Vdss) | 600 V | 650 V | 650 V | 650 V |
Rds On (Max) @ Id, Vgs | 60mOhm @ 25A, 10V | 59mOhm @ 23A, 10V | 65mOhm @ 24A, 10V | 62mOhm @ 24.5A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 100 V | 6810 pF @ 100 V | 4100 pF @ 100 V | 3900 pF @ 100 V |
Eroflueden STW58N60DM2AG PDF DataDhusts an STMicroelectronics Dokumentatioun fir STW58N60DM2AG - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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