STW56N65M2 Tech Spezifikatioune
STMicroelectronics - STW56N65M2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STW56N65M2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-3 | |
Serie | MDmesh™ M2 | |
Rds On (Max) @ Id, Vgs | 62mOhm @ 24.5A, 10V | |
Power Dissipation (Max) | 358W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 49A (Tc) | |
Basis Produktnummer | STW56 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STW56N65M2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STW56N65M2 | STW55NM50N | STW57N65M5-4 | STW55NM60N |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Package / Case | TO-247-3 | TO-247-3 | TO-247-4 | TO-247-3 |
Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V | 180 nC @ 10 V | 98 nC @ 10 V | 190 nC @ 10 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Power Dissipation (Max) | 358W (Tc) | 350W (Tc) | 250W (Tc) | 350W (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 100 V | 5800 pF @ 50 V | 4200 pF @ 100 V | 5800 pF @ 50 V |
Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-4L | TO-247-3 |
Package protegéieren | Tube | Tube | Tube | Tube |
Basis Produktnummer | STW56 | STW55N | STW57 | STW55N |
Rds On (Max) @ Id, Vgs | 62mOhm @ 24.5A, 10V | 54mOhm @ 27A, 10V | 63mOhm @ 21A, 10V | 60mOhm @ 25.5A, 10V |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Vgs (Max) | ±25V | ±25V | ±25V | ±25V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Serie | MDmesh™ M2 | MDmesh™ II | MDmesh™ V | MDmesh™ II |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 49A (Tc) | 54A (Tc) | 42A (Tc) | 51A (Tc) |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 650 V | 500 V | 650 V | 600 V |
Eroflueden STW56N65M2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STW56N65M2 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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