STW23NM50N Tech Spezifikatioune
STMicroelectronics - STW23NM50N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STW23NM50N
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-3 | |
Serie | MDmesh™ II | |
Rds On (Max) @ Id, Vgs | 190mOhm @ 8.5A, 10V | |
Power Dissipation (Max) | 125W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | |
Basis Produktnummer | STW23N |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STW23NM50N.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STW23NM50N | STW220NF75 | STW22NM60N | STW23NM60N |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 125W (Tc) | 500W (Tc) | 125W (Tc) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 190mOhm @ 8.5A, 10V | 4.4mOhm @ 60A, 10V | 220mOhm @ 8A, 10V | 180mOhm @ 9.5A, 10V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | 430 nC @ 10 V | 44 nC @ 10 V | 60 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 120A (Tc) | 16A (Tc) | 19A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Tube | Tube | Tube |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Vgs (Max) | ±25V | ±20V | ±30V | ±25V |
Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 50 V | 12500 pF @ 25 V | 1330 pF @ 50 V | 2050 pF @ 50 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Serie | MDmesh™ II | STripFET™ II | MDmesh™ II | MDmesh™ II |
Basis Produktnummer | STW23N | STW220 | STW22N | STW23N |
Entworf fir Source Voltage (Vdss) | 500 V | 75 V | 600 V | 600 V |
Eroflueden STW23NM50N PDF DataDhusts an STMicroelectronics Dokumentatioun fir STW23NM50N - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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